SWRS111F June   2011  – October 2014 CC1121

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Diagram
  2. 2Revision History
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Diagram
    2. 3.2 Pin Configuration
  4. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Handling Ratings
    3. 4.3  Recommended Operating Conditions (General Characteristics)
    4. 4.4  Thermal Resistance Characteristics for RHB Package
    5. 4.5  RF Characteristics
    6. 4.6  Regulatory Standards
    7. 4.7  Current Consumption, Static Modes
    8. 4.8  Current Consumption, Transmit Modes
      1. 4.8.1 950-MHz Band (High-Performance Mode)
      2. 4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)
      3. 4.8.3 434-MHz Band (High-Performance Mode)
      4. 4.8.4 169-MHz Band (High-Performance Mode)
      5. 4.8.5 Low-Power Mode
    9. 4.9  Current Consumption, Receive Modes
      1. 4.9.1 High-Performance Mode
      2. 4.9.2 Low-Power Mode
    10. 4.10 Receive Parameters
      1. 4.10.1 General Receive Parameters (High-Performance Mode)
      2. 4.10.2 RX Performance in 950-MHz Band (High-Performance Mode)
      3. 4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)
      4. 4.10.4 RX Performance in 434-MHz Band (High-Performance Mode)
      5. 4.10.5 RX Performance in 169-MHz Band (High-Performance Mode)
      6. 4.10.6 RX Performance in Low-Power Mode
    11. 4.11 Transmit Parameters
    12. 4.12 PLL Parameters
      1. 4.12.1 High-Performance Mode
      2. 4.12.2 Low-Power Mode
    13. 4.13 Wake-up and Timing
    14. 4.14 32-MHz Crystal Oscillator
    15. 4.15 32-MHz Clock Input (TCXO) data to TCXO table
    16. 4.16 32-kHz Clock Input
    17. 4.17 32-kHz RC Oscillator
    18. 4.18 I/O and Reset
    19. 4.19 Temperature Sensor
    20. 4.20 Typical Characteristics
  5. 5Detailed Description
    1. 5.1  Block Diagram
    2. 5.2  Frequency Synthesizer
    3. 5.3  Receiver
    4. 5.4  Transmitter
    5. 5.5  Radio Control and User Interface
    6. 5.6  Enhanced Wake-On-Radio (eWOR)
    7. 5.7  Sniff Mode
    8. 5.8  Antenna Diversity
    9. 5.9  Low-Power and High-Performance Mode
    10. 5.10 WaveMatch
  6. 6Typical Application Circuit
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Development Support
        1. 7.1.1.1 Configuration Software
      2. 7.1.2 Device and Development-Support Tool Nomenclature
    2. 7.2 Documentation Support
    3. 7.3 Community Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  8. 8Mechanical Packaging and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Specifications

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

4.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN MAX UNIT CONDITION
Supply voltage (VDD, AVDD_x) –0.3 3.9 V All supply pins must have the same voltage
Input RF level +10 dBm
Voltage on any digital pin –0.3 VDD+0.3 V max 3.9 V
Voltage on analog pins
(including DCPL pins)		 –0.3 2.0 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.

4.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –40 125 °C
VESD Electrostatic discharge (ESD) performance: Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) –2 2 kV
Charged device model (CDM), per JESD22-C101(2) All pins –500 500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER MIN TYP MAX UNIT CONDITION
Voltage supply range 2.0 3.6 V All supply pins must have the same voltage
Voltage on digital inputs 0 VDD V
Temperature range –40 85 °C Ambient

4.4 Thermal Resistance Characteristics for RHB Package

°C/W(1) AIR FLOW (m/s)(2)
RθJC Junction-to-case (top) 21.1 0.00
RθJB Junction-to-board 5.3 0.00
RθJA Junction-to-free air 31.3 0.00
PsiJT Junction-to-package top 0.2 0.00
PsiJB Junction-to-board 5.3 0.00
RθJC Junction-to-case (bottom) 0.8 0.00
(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.
(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency bands 820 960 MHz
410 480 MHz
(273.3) (320) MHz For more information, see application note AN115, Using the CC112x/CC1175 at 274 to 320 MHz.
164 192 MHz
(205) (240) MHz Please contact TI for more information about the use of these frequency bands.
(136.7) (160) MHz
Frequency resolution 30 Hz In 820- to 950-MHz band
15 Hz In 410- to 480-MHz band
6 Hz In 164- to 192-MHz band
Data rate 0 200 kbps Packet mode
0 100 kbps Transparent mode
Data rate step size 1e-4 bps

4.6 Regulatory Standards

PERFORMANCE MODE FREQUENCY BAND SUITABLE FOR COMPLIANCE WITH COMMENTS
High-performance mode 820–960 MHz ARIB T-108
ARIB T-96
ETSI EN 300 220, receiver category 2
ETSI EN 54-25
FCC PART 24 Submask D
FCC Part 15.247
FCC Part 15.249 		Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
410–480 MHz ETSI EN 300 220, category 2 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
164–192 MHz ETSI EN 300 220, category 2 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
Low-power mode 820–960 MHz ETSI EN 300 220, category 2
FCC Part 15.247
FCC Part 15.249
410–480 MHz ETSI EN 300 220, category 2
164–192 MHz ETSI EN 300 220, category 2

4.7 Current Consumption, Static Modes

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER MIN TYP MAX UNIT CONDITION
Power down with retention 0.12 1 µA
0.5 µA Low-power RC oscillator running
XOFF mode 170 µA Crystal oscillator / TCXO disabled
IDLE mode 1.3 mA Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 950-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +10 dBm 37 mA
TX current consumption 0 dBm 26 mA

4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +14 dBm 45 mA
TX current consumption +10 dBm 34 mA

4.8.3 434-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 50 mA
TX current consumption +14 dBm 45 mA
TX current consumption +10 dBm 34 mA

4.8.4 169-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 54 mA
TX current consumption +14 dBm 49 mA
TX current consumption +10 dBm 41 mA

4.8.5 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +10 dBm 32 mA

4.9 Current Consumption, Receive Modes

4.9.1 High-Performance Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
RX wait for sync
1.2 kbps, 4-byte preamble		 2 mA Using RX sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet
RX peak current Peak current consumption during packet reception at the sensitivity threshold
433-, 868-, 915-, 920-, and 950-MHz bands 22 mA
169-MHz band 23 mA
Average current consumption
Check for data packet every 1 second using Wake-on-Radio		 15 µA 50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer

4.9.2 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
RX peak current low-power RX mode Peak current consumption during packet reception at the sensitivity level
1.2 kbps 17 mA

4.10 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%.

4.10.1 General Receive Parameters (High-Performance Mode)

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Saturation +10 dBm
Digital channel filter programmable bandwidth 41.7 200 kHz
IIP3, normal mode –14 dBm At maximum gain
IIP3, high linearity mode –8 dBm Using 6-dB gain reduction in front end
Data rate offset tolerance ±12 % With carrier sense detection enabled and assuming 4-byte preamble
±0.2 % With carrier sense detection disabled
Spurious emissions Radiated emissions measured according to ETSI EN 300 220, fc = 869.5 MHz
1–13 GHz (VCO leakage at 3.5 GHz) –56 dBm
30 MHz to 1 GHz < –57 dBm
Optimum source impedance (Differential or single-ended RX configurations)
868-, 915-, and 920-MHz bands 60 + j60 / 30 + j30 Ω
433-MHz band 100 + j60 / 50+ j30 Ω
169-MHz band 140 + j40 / 70 + j20 Ω

4.10.2 RX Performance in 950-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP Max UNIT CONDITION
Sensitivity
Note: Sensitivity can be improved if the TX and RX matching networks are separated.		 –114 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz(1)
–107 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz(1)
–100 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz, 4GFSK(2)
Blocking and selectivity
1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter		 47 dB ± 50 kHz (adjacent channel)
48 dB + 100 kHz (alternate channel)
69 dB ± 1 MHz
71 dB ± 2 MHz
78 dB ± 10 MHz
Blocking and selectivity
50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode)		 43 dB ± 200 kHz (adjacent channel)
51 dB ± 400 kHz (alternate channel)
62 dB ± 1 MHz
65 dB ± 2 MHz
71 dB ± 10 MHz
Blocking and selectivity
200-kbps 4GFSK, 83-kHz deviation (outer symbols),
200-kHz channel filter, zero IF		 37 dB ± 200 kHz (adjacent channel)
44 dB ± 400 kHz (alternate channel)
55 dB ± 1 MHz
58 dB ± 2 MHz
64 dB ± 10 MHz
(1) DEV is short for deviation, CHF is short for Channel Filter Bandwidth
(2) BT=0.5 is used in all GFSK measurements

4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity –120 dBm 1.2 kbps, DEV=10 kHz CHF=41.7 kHz(1), using increased RX filtering
–117 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz(1)
–114 dBm 4.8 kbps OOK
–110 dBm 38.4 kbps, DEV=20 kHz CHF=100 kHz(1)
–110 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz(1)
–103 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz(1), 4GFSK
Blocking and selectivity
1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter		 48 dB ± 50 kHz (adjacent channel)
48 dB ± 100 kHz (alternate channel)
69 dB ± 1 MHz
74 dB ± 2 MHz
81 dB ± 10 MHz
Blocking and selectivity
38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter		 42 dB + 100 kHz (adjacent channel)
43 dB ± 200 kHz (alternate channel)
62 dB ± 1 MHz
66 dB ± 2 MHz
74 dB ± 10 MHz
Blocking and selectivity
50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode)		 43 dB ± 200 kHz (adjacent channel)
50 dB ± 400 kHz (alternate channel)
61 dB ± 1 MHz
65 dB ± 2 MHz
74 dB ± 10 MHz
Blocking and selectivity
200-kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF		 36 dB ± 200 kHz (adjacent channel)
44 dB ± 400 kHz (alternate channel)
55 dB ± 1 MHz
59 dB ± 2 MHz
67 dB ± 10 MHz

4.10.4 RX Performance in 434-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity   –109   dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz(1)
  –116   dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz(1)
Blocking and selectivity
1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter 		  54   dB ± 50 kHz (adjacent channel)
  54   dB + 100 kHz (alternate channel)
  74   dB ± 1 MHz
  78   dB ± 2 MHz
  86   dB ± 10 MHz
Blocking and selectivity
38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter 		  47   dB + 100 kHz (adjacent channel)
  50   dB ± 200 kHz (alternate channel)
  67   dB ± 1 MHz
  71   dB ± 2 MHz
  78   dB ± 10 MHz

4.10.5 RX Performance in 169-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity   –117   dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz(1)
Blocking and selectivity
1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter 		  60   dB ± 50 kHz (adjacent channel)
  60   dB + 100 kHz (alternate channel)
  76   dB ± 1 MHz
  77   dB ± 2 MHz
  83   dB ± 10 MHz

4.10.6 RX Performance in Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity     –99   dBm 38.4 kbps, DEV=50 kHz CHF=100 kHz(1)
  –99   dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz(1)
Blocking and selectivity
1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter 		  43   dB ± 50 kHz (adjacent channel)
  45   dB + 100 kHz (alternate channel)
  71   dB ± 1 MHz
  74   dB ± 2 MHz
  75   dB ± 10 MHz
Blocking and selectivity
38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter   		  37   dB + 100 kHz (adjacent channel)
  43   dB + 200 kHz (alternate channel)
  58   dB ± 1 MHz
  62   dB ± 2 MHz
  64   dB + 10 MHz
Blocking and selectivity
50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode) 		  43   dB + 200 kHz (adjacent channel)
  52   dB + 400 kHz (alternate channel)
  60   dB ± 1 MHz
  64   dB ± 2 MHz
  65   dB ± 10 MHz
Saturation   +10   dBm  

4.11 Transmit Parameters

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Max output power   +12   dBm At 950 MHz
  +14   dBm At 915- and 920-MHz
+15 dBm At 915- and 920-MHz with VDD = 3.6 V
  +15   dBm At 868 MHz
+16 dBm At 868 MHz with VDD = 3.6 V
  +15   dBm At 433 MHz
+16 dBm At 433 MHz with VDD = 3.6 V
  +15   dBm At 169 MHz
+16 dBm At 169 MHz with VDD = 3.6 V
Min output power   –11   dBm Within fine step size range
–40 dBm Within coarse step size range
Output power step size   0.4   dB Within fine step size range
Adjacent channel power   –75   dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant)
  –58   dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI 300 220 compliant)
  –61   dBc 2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation
Spurious emissions
(not including harmonics) 		  <–60   dBm  
Harmonics   Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design.
Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300 220 in 169-, 433-, and 868-MHz bands and FCC Part 15.247 in 450- and 915-MHz band
Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals (>50-ms periods).
Second Harm, 169 MHz –39 dBm
Third Harm, 169 MHz –58 dBm
Second Harm, 433 MHz –56 dBm
Third Harm, 433 MHz –51 dBm
Second Harm, 450 MHz –60 dBm
Third Harm, 450 MHz –45 dBm
Second Harm, 868 MHz –40 dBm
Third Harm, 868 MHz –42 dBm
Second Harm, 915 MHz 56 dBuV/m
Third Harm, 915 MHz 52 dBuV/m
Fourth Harm, 915 MHz 60 dBuV/m
Second Harm, 950 MHz –58 dBm
Third Harm, 950 MHz –42 dBm
Optimum load    
Impedance 868-, 915-, and 920-MHz bands 35 + j35 Ω
433-MHz band 55 + j25 Ω
169-MHz band 80 + j0 Ω

4.12 PLL Parameters

4.12.1 High-Performance Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 950-MHz band   –99   dBc/Hz ± 10 kHz offset
  –99   dBc/Hz ± 100 kHz offset
  –123   dBc/Hz ± 1 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands   –99   dBc/Hz ± 10 kHz offset
  –100   dBc/Hz ± 100 kHz offset
  –122   dBc/Hz ± 1 MHz offset
Phase noise in 433-MHz band   –106   dBc/Hz ± 10 kHz offset
  –107   dBc/Hz ± 100 kHz offset
  –127   dBc/Hz ± 1 MHz offset
Phase noise in 169-MHz band   –111   dBc/Hz ± 10 kHz offset
  –116   dBc/Hz ± 100 kHz offset
  –135   dBc/Hz ± 1 MHz offset

4.12.2 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 950-MHz band   –90   dBc/Hz ± 10 kHz offset
  –92   dBc/Hz ± 100 kHz offset
  –124   dBc/Hz ± 1 MHz offset
Phase noise in 868- and 915-MHz bands   –95   dBc/Hz ± 10 kHz offset
  –95   dBc/Hz ± 100 kHz offset
  –124   dBc/Hz ± 1 MHz offset
Phase noise in 433-MHz band   –98   dBc/Hz ± 10 kHz offset
  –102   dBc/Hz ± 100 kHz offset
  –129   dBc/Hz ± 1 MHz offset
Phase noise in 169-MHz band   –106   dBc/Hz ± 10 kHz offset
  –110   dBc/Hz ± 100 kHz offset
  –136   dBc/Hz ± 1 MHz offset

4.13 Wake-up and Timing

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Powerdown to IDLE   0.4   ms Depends on crystal
IDLE to RX/TX   166   µs Calibration disabled
  461   µs Calibration enabled
RX/TX turnaround   50   µs  
RX/TX to IDLE time   296   µs Calibrate when leaving RX/TX enabled
  0   µs Calibrate when leaving RX/TX disabled
Frequency synthesizer calibration   391   µs When using SCAL strobe
Minimum required number of preamble bytes   0.5   bytes Required for RF front-end gain settling only. Digital demodulation does not require preamble for settling.
Time from start RX until valid RSSI
Including gain settling (function of channel bandwidth).
Programmable for trade-off between speed and accuracy		   0.3   ms 200-kHz channels

4.14 32-MHz Crystal Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Crystal frequency 32   33.6 MHz It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (CL)   10   pF  
ESR     60 Ω Simulated over operating conditions
Start-up time   0.4   ms Depends on crystal

4.15 32-MHz Clock Input (TCXO)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency 32   33.6 MHz  
TCXO with CMOS output TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage 1.4 VDD V
Low input voltage 0 0.6 V
Rise / Fall time 2 ns
Clipped sine output TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak) 0.8 1.5 V

4.16 32-kHz Clock Input

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency   32   kHz  
32-kHz clock input pin input high voltage 0.8×VDD     V  
32-kHz clock input pin input low voltage     0.2×VDD V  

4.17 32-kHz RC Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency   32   kHz After calibration
Frequency accuracy after calibration   ±0.1   % Relative to frequency reference (that is, 32-MHz crystal or TCXO)
Initial calibration time   1.6   ms  

4.18 I/O and Reset

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Logic input high voltage 0.8×VDD     V  
Logic input low voltage 0.2×VDD V
Logic output high voltage 0.8×VDD     V At 4-mA output load or less
Logic output low voltage 0.2×VDD V
Power-on reset threshold   1.3   V Voltage on DVDD pin

4.19 Temperature Sensor

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Temperature sensor range –40   85 °C  
Temperature coefficient   2.66   mV / °C Change in sensor output voltage versus change in temperature
Typical output voltage   794   mV Typical sensor output voltage at TA = 25°C, VDD = 3.0 V
VDD coefficient   1.17   mV / V Change in sensor output voltage versus change in VDD

The CC1121 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (See Section 4.19, Temperature Sensor). For more information, see the temperature sensor design note (SWRA415).

4.20 Typical Characteristics

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated.

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2.

Figure 4-6 was measured at the 50-Ω antenna connector.

tc01_swrs111.gifFigure 4-1 TX Current at 868 MHz
vs PA Power Setting
tc03_swrs111.gifFigure 4-3 Output Power vs Voltage
Max Setting, 170 MHz
tc05_swrs111.png
200 kbps, DEV = 83 kHz (Outer Symbols), 4GFSK
Figure 4-5 Eye Diagram
tc07_swrs111.png
9.6 kbps in 12.5-kHz Channel
Figure 4-7 FCC Part 90 Mask D
tc09_swrs111.gifFigure 4-9 GPIO Output High Voltage vs Current Being Sourced
tc02_swrs111.gifFigure 4-2 Output Power vs Temperature
Max Setting, 170 MHz, 3.6 V
tc04_swrs111.gifFigure 4-4 Output Power at 868 MHz
vs PA Power Setting
tc06_swrs111.pngFigure 4-6 Output Power vs Load Impedance (+14-dBm Setting)
tc08_swrs111.pngFigure 4-8 Phase Noise in 868-MHz Band
tc10_swrs111.gifFigure 4-10 GPIO Output Low Voltage vs Current Being Sinked