SLPS535 March   2015 CSD13302W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Thermal Information
    2. 5.2 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13302W Package Dimensions
      1. 7.1.1 Land Pattern Recommendation
    2. 7.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZB|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra Low On Resistance
  • Low Qg and Qgd
  • Small Footprint 1 mm × 1 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile.

Top View

CSD13302W IO.png

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 6.0 nC
Qgd Gate Charge Gate-to-Drain 2.1 nC
RDS(on) Drain-to-Source
On-Resistance
VGS = 2.5 V 21.2
VGS = 4.5 V 14.6
VGS(th) Threshold Voltage 1.0 V

Ordering Information(1)

Device Qty Media Package Ship
CSD13302W 3000 7-Inch Reel 1.0 mm × 1.0 mm Wafer Level Package Tape and Reel
CSD13302WT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±10 V
ID Continuous Drain Current (1) 1.6 A
IDM Pulsed Drain Current (2) 29 A
PD Power Dissipation (3) 1.8 W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
  1. Device Operating at a temperature of 105ºC
  2. Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle ≤1%
  3. Max Cu Typ RθJA = 70ºC/W

RDS(on) vs VGS

CSD13302W D007_SLPS534.gif

Gate Charge

CSD13302W D004_SLPS534_FP_r2.gif