SLPS593 October   2016 CSD13380F3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJM|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Low On Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint
    • 0.73 mm × 0.64 mm
  • Low Profile
    • 0.35-mm Max Height
  • Integrated ESD Protection Diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications

Description

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 0.91 nC
Qgd Gate Charge Gate-to-Drain 0.15 nC
RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 96
VGS = 2.5 V 73
VGS = 4.5 V 63
VGS(th) Threshold Voltage 0.85 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD13380F3 3000 7-Inch Reel Femto
0.73 mm × 0.64 mm
Land Grid Array (LGA)
Tape
and
Reel
CSD13380F3T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C (unless otherwise stated) VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage 8 V
ID Continuous Drain Current(1) 3.6 A
Continuous Drain Current(2) 2.1
IDM Pulsed Drain Current(2)(3) 13.5 A
PD Power Dissipation(1) 1.4 W
Power Dissipation(2) 0.5
V(ESD) Human-Body Model (HBM) 3 kV
Charged-Device Model (CDM) 2
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
  1. Max Cu, typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz
    (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  2. Min Cu, typical RθJA = 255°C/W.
  3. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

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Typical Part Dimensions

CSD13380F3 layout_3d_slps579.gif

Top View

CSD13380F3 Top_View_90.gif