SLPS593 October   2016 CSD13380F3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJM|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 12 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 50 nA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 25 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.55 0.85 1.30 V
RDS(on) Drain-to-source on resistance VGS = 1.8 V, IDS = 0.1 A 96 135
VGS = 2.5 V, IDS = 0.4 A 73 92
VGS = 4.5 V, IDS = 0.4 A 63 76
gfs Transconductance VDS = 1.2 V, IDS = 0.4 A 4.3 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 6 V,
ƒ = 1 MHz
120 156 pF
Coss Output capacitance 81 105 pF
Crss Reverse transfer capacitance 9.6 12.5 pF
RG Series gate resistance 16 Ω
Qg Gate charge total (4.5 V) VDS = 6 V, IDS = 0.4 A 0.91 1.2 nC
Qgd Gate charge gate-to-drain 0.15 nC
Qgs Gate charge gate-to-source 0.19 nC
Qg(th) Gate charge at Vth 0.15 nC
Qoss Output charge VDS = 6 V, VGS = 0 V 0.81 nC
td(on) Turnon delay time VDS = 6 V, VGS = 4.5 V,
IDS = 0.4 A, RG = 2 Ω
4 ns
tr Rise time 4 ns
td(off) Turnoff delay time 11 ns
tf Fall time 3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 0.4 A, VGS = 0 V 0.71 1 V
Qrr Reverse recovery charge VDS= 6 V, IF = 0.4 A, di/dt = 100 A/μs 2.1 nC
trr Reverse recovery time 8 ns

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 90 °C/W
Junction-to-ambient thermal resistance(2) 255
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
Device mounted on FR4 material with minimum Cu mounting area.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD13380F3 D001_SLPS601.png
Figure 1. Transient Thermal Impedance
CSD13380F3 D002_SLPS593.gif
Figure 2. Saturation Characteristics
CSD13380F3 D003_SLPS593.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD13380F3 D004_SLPS593.gif
VDS = 6 V ID = 0.4 A
Figure 4. Gate Charge
CSD13380F3 D006_SLPS593.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD13380F3 D008_SLPS593.gif
ID = 0.4A
Figure 8. Normalized On-State Resistance vs Temperature
CSD13380F3 D010_SLPS593.gif
Single pulse, typical RθJA = 255°C/W (min Cu)
Figure 10. Maximum Safe Operating Area
CSD13380F3 D012_SLPS593.gif
Typical RθJA = 255°C/W (min Cu)
Figure 12. Maximum Drain Current vs Temperature
CSD13380F3 D005_SLPS593.gif
Figure 5. Capacitance
CSD13380F3 D007_SLPS593.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD13380F3 D009_SLPS593p2.gif
Figure 9. Typical Diode Forward Voltage
CSD13380F3 D011_SLPS593.gif
Figure 11. Single Pulse Unclamped Inductive Switching