SLPS448D July   2013  – May 2015 CSD13381F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD13381F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low On-Resistance
  • Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

2 Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Single-Cell Battery Applications
  • Handheld and Mobile Applications

3 Description

This 140 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions
CSD13381F4 top_image_SLPS447.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 1060 pC
Qgd Gate Charge Gate-to-Drain 140 pC
RDS(on) Drain-to-Source On-Resistance VGS = 1.8 V 310
VGS = 2.5 V 170
VGS = 4.5 V 140
VGS(th) Threshold Voltage 0.85 V


Ordering Information(1)

Device Qty Media Package Ship
CSD13381F4 3000 7-Inch Reel Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less Tape and Reel
CSD13381F4T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage 8 V
ID Continuous Drain Current, TA = 25°C(1) 2.1 A
IDM Pulsed Drain Current, TA = 25°C(2) 7 A
IG Continuous Gate Clamp Current 35 mA
Pulsed Gate Clamp Current(2) 350
PD Power Dissipation(1) 500 mW
ESD Rating Human Body Model (HBM) 4 kV
Charged Device Model (CDM) 2 kV
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
EAS Avalanche Energy, single pulse ID = 7.4 A,
L = 0.1 mH, RG = 25 Ω
2.7 mJ
  1. Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
  2. Pulse duration ≤300 μs, duty cycle ≤2%
Top View
CSD13381F4 Top_View_6.gif

4 Revision History

Changes from C Revision (September 2014) to D Revision

  • Corrected typo for IGSS Test Condition Go

Changes from B Revision (February 2014) to C Revision

  • Corrected timing VDS to read 6 V Go

Changes from A Revision (November 2013) to B Revision

  • Added IG parameterGo
  • Lowered IDSS limitGo
  • Lowered IGSS limitGo

Changes from * Revision (July 2013) to A Revision

  • Updated device ordering informationGo
  • Changed test voltage conditionsGo
  • Changed Figure 4 Gate Charge graphGo