SLPS206B August   2009  – November 2016 CSD16411Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
  • Optimized for Control FET Applications

3 Description

This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View
CSD16411Q3 P0093-01.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 2.9 nC
Qgd Gate Charge Gate-to-Drain 0.7 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 12 mΩ
VGS = 10 V 8
VGS(th) Threshold Voltage 2 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD16411Q3 2500 13-Inch Reel SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD16411Q3T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +16 / –12 V
ID Continuous Drain Current (Package Limited) 60 A
Continuous Drain Current (Silicon Limited), TC = 25°C 50
Continuous Drain Current(1) 14
IDM Pulsed Drain Current, TA = 25°C(2) 130 A
PD Power Dissipation(1) 2.87 W
Power Dissipation, TC = 25°C 35
TJ,
TSTG		 Operating Junction
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 18 A, L = 0.1 mH, RG = 25 Ω		 16 mJ
  1. RθJA = 45°C/W on 1-in2 Cu (2-oz) on 0.06-in thick FR4 PCB.
  2. Max RθJC = 3.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(ON) vs VGS

CSD16411Q3 D007_SLPS206A.gif

Gate Charge

CSD16411Q3 D004_SLPS206A_FP.gif