SLPS610A October   2016  – January 2017 CSD17585F5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJK|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Low-On Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

  • Optimized for Industrial Load Switch Applications
  • Optimized for General Purpose Switching Applications

Description

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 1.9 nC
Qgd Gate Charge Gate-to-Drain 0.39 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 26
VGS = 10 V 22
VGS(th) Threshold Voltage 1.3 V


Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17585F5 3000 7-Inch Reel Femto
1.53-mm × 0.77-mm
SMD Lead Less
Tape and Reel
CSD17585F5T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage +20 V
ID Continuous Drain Current(1) 3.6 A
Continuous Drain Current(2) 5.9
IDM Pulsed Drain Current(1)(3) 34 A
PD Power Dissipation(1) 0.5 W
Power Dissipation(2) 1.4
V(ESD) Human-Body Model (HBM) 4 kV
Charged-Device Model (CDM) 2
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
  1. Min Cu, typical RθJA = 245°C/W.
  2. Max Cu, typical RθJA = 90°C/W.
  3. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Typical Part Dimensions

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Top View

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