SLPS549A August   2015  – May 2016 CSD19537Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Primary Side Isolated Converters
  • Motor Control

3 Description

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD19537Q3 p0095-01_lps202.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 16 nC
Qgd Gate Charge Gate-to-Drain 2.9 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6 V 13.8
VGS = 10 V 12.1
VGS(th) Threshold Voltage 3 V

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Ordering Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD19537Q3 13-Inch Reel 2500 SON 3.3- x 3.3-mm
Plastic Package
Tape and Reel
CSD19537Q3T 13-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 50 A
Continuous Drain Current (Silicon Limited), TC = 25°C 53 A
Continuous Drain Current(1) 9.7 A
IDM Pulsed Drain Current(2) 219 A
PD Power Dissipation(1) 2.8 W
Power Dissipation, TC = 25°C 83 W
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω
55 mJ
  1. Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Max RθJC = 1.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD19537Q3 D007_SLPS549.gif

Gate Charge

CSD19537Q3 D004_SLPS549_FP.gif