SLPS450E October   2013  – May 2015 CSD23381F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23381F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

2 Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications

3 Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions
CSD23381F4 top_image_SLPS447.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –12 V
Qg Gate Charge Total (–4.5 V) 1140 pC
Qgd Gate Charge Gate-to-Drain 190 pC
RDS(on) Drain-to-Source On-Resistance VGS = –1.8 V 480
VGS = –2.5 V 250
VGS = –4.5 V 150
VGS(th) Threshold Voltage –0.95 V


Ordering Information(1)

Device Qty Media Package Ship
CSD23381F4 3000 7-Inch Reel Femto(0402)
1.0 mm x 0.6 mm
Land Grid Array (LGA)
Tape and Reel
CSD23381F4T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.


Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –12 V
VGS Gate-to-Source Voltage –8 V
ID Continuous Drain Current(1) –2.3 A
IDM Pulsed Drain Current(2) –9 A
IG Continuous Gate Clamp Current –35 mA
Pulsed Gate Clamp Current(2) –350
PD Power Dissipation(1) 500 mW
V(ESD) Human Body Model (HBM) 4 kV
Charged Device Model (CDM) 2 kV
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
  1. Typical RθJA = 85°C/W on 1 inch2 (6.45 cm2), 2 oz.
    (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
  2. Pulse duration ≤300 μs, duty cycle ≤2%
Top View
CSD23381F4 Top_View2.gif

4 Revision History

Changes from D Revision (September 2014) to E Revision

  • Corrected typo for IDSS Test Condition Go
  • Corrected typo for IGSS Test Condition Go

Changes from C Revision (July 2014) to D Revision

  • Corrected timing VDS to read –6 V Go

Changes from B Revision (February 2014) to C Revision

  • Corrected capacitance units to read pF in Figure 5Go

Changes from A Revision (January 2014) to B Revision

  • Updated lead and halogen free in features Go
  • Added IG parameterGo
  • Lowered IDSS limitGo
  • Lowered IGSS limitGo

Changes from * Revision (October 2013) to A Revision

  • Added small reel infoGo