SLPS494B November   2014  – February 2017 CSD83325L

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJE|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

Applications

  • Battery Management
  • Battery Protection

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Top View
CSD83325L Top_View.gif
Configuration
CSD83325L Configuration.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VS1S2 Source-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 8.4 nC
Qgd Gate Charge Gate-to-Drain 1.9 nC
RS1S2(on) Source-to-Source On Resistance VGS = 2.5 V 17.5
VGS = 3.8 V 10.9
VGS = 4.5 V 9.9
VGS(th) Threshold Voltage 0.95 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD83325L 3000 7-Inch Reel 2.20-mm × 1.15-mm
Land Grid Array (LGA)
Package
Tape and Reel
CSD83325LT 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VS1S2 Source-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±10 V
IS Continuous Source Current(1) 8 A
ISM Pulsed Source Current(2) 52 A
PD Power Dissipation 2.3 W
V(ESD) Human-Body Model (HBM) 2000 V
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150 °C
  1. Device operating at a temperature of 105ºC.
  2. Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

.

RDS(on) vs VGS

CSD83325L D007_SLPS494.gif

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Gate Charge

CSD83325L D004_SLPS494_FP_r2.gif