SLPS523B February   2015  – May 2019 CSD87501L

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
    2.     Configuration
      1.      Device Images
        1.       RS1S2(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJG|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Top View

CSD87501L Front_Page_r2.gif

Configuration

CSD87501L Configuration.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VS1S2 Source-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 15 nC
Qgd Gate Charge Gate-to-Drain 6.0 nC
RS1S2(on) Source-to-Source On-Resistance VGS = 4.5 V 9.3 mΩ
VGS = 10 V 6.6
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD87501L 7-Inch Reel 3000 3.37 mm × 1.47 mm
Land Grid Array
Package		 Tape
and
Reel
CSD87501LT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VS1S2 Source-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
IS Continuous Source Current(1) 14 A
ISM Pulsed Source Current(2) 72 A
PD Power Dissipation 2.5 W
V(ESD) Human-Body Model (HBM) 2 kV
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
  1. Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Typical min Cu RθJA = 135°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.