SLVSC40H June   2013  – May 2020 DRV8711

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Indexer Timing Requirements
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Motor Drivers
      2. 7.3.2  Direct PWM Input Mode
      3. 7.3.3  Microstepping Indexer
      4. 7.3.4  Current Regulation
      5. 7.3.5  Decay Modes
      6. 7.3.6  Blanking Time
      7. 7.3.7  Predrivers
      8. 7.3.8  Configuring Predrivers
      9. 7.3.9  External FET Selection
      10. 7.3.10 Stall Detection
        1. 7.3.10.1 Internal Stall Detection
        2. 7.3.10.2 External Stall Detection
      11. 7.3.11 Protection Circuits
        1. 7.3.11.1 Overcurrent Protection (OCP)
        2. 7.3.11.2 Predriver Fault
        3. 7.3.11.3 Thermal Shutdown (TSD)
        4. 7.3.11.4 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 RESET and SLEEPn Operation
      2. 7.4.2 Microstepping Drive Current
    5. 7.5 Programming
      1. 7.5.1 Serial Data Format
    6. 7.6 Register Maps
      1. 7.6.1 Control Registers
      2. 7.6.2 CTRL Register (Address = 0x00)
      3. 7.6.3 TORQUE Register (Address = 0x01)
      4. 7.6.4 OFF Register (Address = 0x02)
      5. 7.6.5 BLANK Register (Address = 0x03)
      6. 7.6.6 DECAY Register (Address = 0x04)
      7. 7.6.7 STALL Register (Address = 0x05)
      8. 7.6.8 DRIVE Register (Address = 0x06)
      9. 7.6.9 STATUS Register (Address = 0x07)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Sense Resistor
      2. 8.1.2 Optional Series Gate Resistor
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Set Step Rate
        2. 8.2.2.2 Calculate Current Regulation
        3. 8.2.2.3 Support External FETs
        4. 8.2.2.4 Pick Decay Mode
        5. 8.2.2.5 Config Stall Detection
        6. 8.2.2.6 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Layout Guidelines

The VM pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value of 0.01-μF rated for VM. This capacitor should be placed as close to the VM pin as possible with a thick trace or ground plane connection to the device GND pin. The VM pin must be bypassed to ground using an appropriate bulk capacitor. This component may be an electrolytic and should be located close to the DRV8711.

A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. TI recommends a value of 1 μF rated for 16 V. Place this component as close to the pins as possible.

A low-ESR ceramic capacitor must be placed in between the CP1 and CP2 pins. TI recommends a value of 0.1 μF rated for VM. Place this component as close to the pins as possible.

Bypass VINT to ground with a 1-μF ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin as possible.

Bypass V5 to ground with a 1-μF ceramic capacitor rated 10 V. Place this bypass capacitor as close to the pin as possible.