SLVS912J January   2009  – January 2016 DRV8821

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Dissipation Ratings
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Current Regulation
      3. 7.3.3 Blanking Time
      4. 7.3.4 Microstepping Indexer
      5. 7.3.5 xRESETn and xENBLn Operation
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 Overcurrent Protection (OCP)
        2. 7.3.6.2 Thermal Shutdown (TSD)
        3. 7.3.6.3 Undervoltage Lockout (UVLO)
        4. 7.3.6.4 Shoot-Through Current Prevention
    4. 7.4 Device Functional Modes
      1. 7.4.1 Decay Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
      2. 10.3.2 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN MAX UNIT
VM Power supply voltage –0.3 34 V
VI Logic input voltage (4) –0.5 5.75 V
IO(peak) Peak motor drive output current, t < 1 μs Internally limited
IO Motor drive output current (3) 1.5 A
PD Continuous total power dissipation See Dissipation Ratings
TJ Operating virtual junction temperature –40 150 °C
TA Operating ambient temperature –40 85 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.
(4) Input pins may be driven in this voltage range regardless of presence or absence of VM.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage 8 32 V
IMOT Continuous motor drive output current(1) 1 1.5 A
VREF VREF input voltage 1 4 V
(1) Power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV8821 UNIT
DCA (HTSSOP)
48 PINS
RθJA Junction-to-ambient thermal resistance 31.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.3 °C/W
RθJB Junction-to-board thermal resistance 15 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 14.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, no loads 5 8 mA
IVMSD VM shutdown supply current VM = 24 V, ABENBLn = CDENBLn = 1 2.5 μA
VUVLO VM undervoltage lockout voltage VM rising 6.5 8 V
VCP Charge pump voltage Relative to VM 12 V
VV3P3 VV3P3 output voltage 3.20 3.30 3.40 V
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.7 V
VIH Input high voltage 2 V
VHYS Input hysteresis 0.3 0.45 0.6 V
IIN Input current
(internal pulldown current)		 VIN = 3.3 V 100 μA
OVERTEMPERATURE PROTECTION
tTSD Thermal shutdown temperature Die temperature 150 °C
MOTOR DRIVER
Rds(on) Motor AB FET on resistance
(each individual FET)		 VM = 24 V, IO = 0.8 A, TJ = 25°C 0.25 Ω
VM = 24 V, IO = 0.8 A, TJ = 85°C 0.31 0.37
Rds(on) Motor CD FET on resistance
(each individual FET)		 VM = 24 V, IO = 0.8 A, TJ = 25°C 0.30 Ω
VM = 24 V, IO = 0.8 A, TJ = 85°C 0.38 0.45
IOFF Off-state leakage current ±12 μA
fPWM Motor PWM frequency(1) 45 50 55 kHz
tBLANK ITRIP blanking time(2) 3.75 μs
tF Output fall time 50 300 ns
tR Output rise time 50 300 ns
IOCP Overcurrent protect level 1.5 3 4.5 A
tOCP Overcurrent protect trip time 2.5 μs
tMD Mixed decay percentage Measured from beginning of PWM cycle 75%
VREF INPUT/CURRENT CONTROL ACCURACY
IREF xVREF input current xVREF = 3.3 V –3 3 μA
ΔICHOP Chopping current accuracy xVREF = 2.5 V, derived from V3P3;
71% to 100% current		 –5% 5%
xVREF = 2.5 V, derived from V3P3;
20% to 56% current		 –10% 10%
(1) Factory option 100 kHz.
(2) Factory options for 2.5 μs, 5 μs or 6.25 μs.

6.6 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
1 fSTEP Step frequency 200 kHz
2 tWH(STEP) Pulse duration, xSTEP high 2.5 μs
3 tWL(STEP) Pulse duration, xSTEP low 2.5 μs
4 tSU(STEP) Setup time, command to xSTEP rising 200 ns
5 tH(STEP) Hold time, command to xSTEP rising 200 ns
6 tWAKE Wakeup time, SLEEPn inactive to xSTEP 1 ms

6.7 Dissipation Ratings

BOARD PACKAGE RθJA DERATING FACTOR
ABOVE TA = 25°C		 TA < 25°C TA = 70°C TA = 85°C
Low-K(1) DCA 75.7°C/W 13.2 mW/°C 1.65 W 1.06 W 0.86 W
Low-K(2) 32°C/W 31.3 mW/°C 3.91 W 2.50 W 2.03 W
High-K(3) 30.3°C/W 33 mW/°C 4.13 W 2.48 W 2.15 W
High-K(4) 22.3°C/W 44.8 mW/°C 5.61 W 3.59 W 2.91 W
(1) The JEDEC Low-K board used to derive this data was a 76-mm x 114-mm, 2-layer, 1.6-mm thick PCB with no backside copper.
(2) The JEDEC Low-K board used to derive this data was a 76-mm x 114-mm, 2-layer, 1.6-mm thick PCB with 25-cm2 2-oz copper on back side.
(3) The JEDEC High-K board used to derive this data was a 76-mm x 114-mm, 4-layer, 1.6-mm thick PCB with no backside copper and solid 1-oz internal ground plane.
(4) The JEDEC High-K board used to derive this data was a 76-mm x 114-mm, 4-layer, 1.6-mm thick PCB with 25-cm2 1-oz copper on back side and solid 1-oz internal ground plane.
DRV8821 timing_lvs912.gif Figure 1. Timing Diagram

6.8 Typical Characteristics

DRV8821 C001_SLVS912.png
Figure 2. Supply Current over Temperature
DRV8821 C005_SLVS912.png
Figure 4. Charge Pump Voltage over Temperature
DRV8821 C007_SLVS912.png Figure 6. LS RDSON AOUT2 over Temperature
DRV8821 C009_SLVS912.png Figure 8. HS RDSON AOUT2 over Temperature
DRV8821 C002_SLVS912.png
Figure 3. Supply Current over Supply Voltage
DRV8821 C006_SLVS912.png
Figure 5. Charge Pump Voltage over Supply Voltage
DRV8821 C008_SLVS912.png Figure 7. LS RDSON A OUT1over Temperature
DRV8821 C010_SLVS912.png Figure 9. HS RDSON AOUT1 over Temperature