SBOS893D August   2018  – June 2020 INA821

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      INA821 Simplified Internal Schematic
      2.      Typical Distribution of Input Stage Offset Voltage Drift
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics: Table of Graphs
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Input Common-Mode Range
      4. 8.3.4 Input Protection
      5. 8.3.5 Operating Voltage
      6. 8.3.6 Error Sources
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Other Application Examples
      1. 9.3.1 Resistance Temperature Detector Interface
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOSI Input stage offset voltage(1)(3) INA821ID, INA821DRG 10 35 µV
INA821IDGK 10 40
TA = –40°C to +125°C(2) INA821ID, INA821DRG 75
INA821IDGK 80
vs temperature, TA = –40°C to +125°C 0.1 0.4 µV/°C
VOSO Output stage offset voltage(1)(3) INA821ID, INA821DGK 50 350 µV
INA821DRG 50 400
TA = –40°C to +125°C(2) 850
vs temperature, TA = –40°C to +125°C 5 µV/°C
PSRR Power-supply rejection ratio G = 1, RTI 110 120 dB
G = 10, RTI 114 130
G = 100, RTI 130 135
G = 1000, RTI 136 140
zid Differential impedance 100 || 1 GΩ || pF
zic Common-mode impedance 100 || 7 GΩ || pF
RFI filter, –3-dB frequency 45 MHz
VCM Operating input range(4) (V–) + 2 (V+) – 2 V
VS = ±2.25 V to ±18 V, TA = –40°C to +125°C See Figure 51 to Figure 54
Input overvoltage range TA = –40°C to +125°C(2) ±40 V
CMRR Common-mode rejection ratio At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,
G = 1		 92 105 dB
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,
G = 10		 112 125
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,
G = 100		 132 145
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,
G = 1000		 140 150
BIAS CURRENT
IB Input bias current VCM = VS / 2 0.15 0.5 nA
TA = –40°C to +125°C 2
IOS Input offset current VCM = VS / 2 0.15 0.5 nA
TA = –40°C to +125°C 2
NOISE VOLTAGE
eNI Input stage voltage noise(6) f = 1 kHz, G = 100, RS = 0 Ω 7 nV/√Hz
fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω 0.14 µVPP
eNO Output stage voltage noise(6) f = 1 kHz, RS = 0 Ω 65 nV/√Hz
fB = 0.1 Hz to 10 Hz, RS = 0 Ω 2.5 µVPP
In Noise current f = 1 kHz 130 fA/√Hz
fB = 0.1 Hz to 10 Hz, G = 100 4.7 pAPP
GAIN
G Gain equation 1 + (49.4 kΩ / RG) V/V
Range of gain 1 10000 V/V
GE Gain error G = 1, VO = ±10 V ±0.005% ±0.025%
G = 10, VO = ±10 V ±0.025% ±0.15%
G = 100, VO = ±10 V ±0.025% ±0.15%
G = 1000, VO = ±10 V ±0.05%
Gain vs temperature(5) G = 1, TA = –40°C to +125°C ±5 ppm/°C
G > 1, TA = –40°C to +125°C ±35
Gain nonlinearity G = 1 to 10, VO = –10 V to 10 V, RL = 10 kΩ 1 10 ppm
G = 100, VO = –10 V to 10 V, RL = 10 kΩ 15
G = 1000, VO = –10 V to 10 V, RL = 10 kΩ 10
G = 1 to 100, VO = –10 V to 10 V, RL = 2 kΩ 30
OUTPUT
Voltage swing (V–) + 0.15 (V+) – 0.15 V
Load capacitance stability 1000 pF
ZO Closed-loop output impedance f = 10 kHz 1.3 Ω
ISC Short-circuit current Continuous to VS / 2 ±20 mA
FREQUENCY RESPONSE
BW Bandwidth, –3 dB G = 1 4.7 MHz
G = 10 970 kHz
G = 100 290
G = 1000 30
SR Slew rate G = 1, VO = ±10 V 2.0 V/µs
tS Settling time 0.01%, G = 1 to 100, VSTEP = 10 V 6 µs
0.01%, G = 1000, VSTEP = 10 V 40
0.001%, G = 1 to 100, VSTEP = 10 V 10
0.001%, G = 1000, VSTEP = 10 V 50
REFERENCE INPUT
RIN Input impedance 10 kΩ
Voltage range (V–) (V+) V
Gain to output 1 V/V
Reference gain error 0.01%
POWER SUPPLY
VS Power-supply voltage Single-supply 4.5 36 V
Dual-supply ±2.25 ±18
IQ Quiescent current VIN = 0 V 600 650 µA
vs temperature, TA = –40°C to +125°C 870
(1) Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G).
(2) Specified by characterization.
(3) Offset drifts are uncorrelated. Input-referred offset drift is calculated using: ΔVOS(RTI) = √[ΔVOSI2 + (ΔVOSO / G)2].
(4) Input voltage range of the Instrumentation Amplifier input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage. See Typical Characteristic curves Figure 51 through Figure 54 for more information.
(5) The values specified for G > 1 do not include the effects of the external gain-setting resistor, RG.
(6) Total RTI voltage noise is equal to: eN(RTI) = √[eNI2 + (eNO / G)2].