SBOS893C August   2018  – July 2019 INA821

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      INA821 Simplified Internal Schematic
      2.      Typical Distribution of Input Stage Offset Voltage Drift
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics: Table of Graphs
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Input Common-Mode Range
      4. 8.3.4 Input Protection
      5. 8.3.5 Operating Voltage
      6. 8.3.6 Error Sources
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Other Application Examples
      1. 9.3.1 Resistance Temperature Detector Interface
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

Attention to good layout practices is always recommended. For best operational performance of the device, use good PCB layout practices, including:

  • Take care to make sure that both input paths are well-matched for source impedance and capacitance to avoid converting common-mode signals into differential signals. Even slight mismatch in parasitic capacitance at the gain setting pins can degrade CMRR over frequency. For example, in applications that implement gain switching using switches or PhotoMOS® relays to change the value of RG, select the component so that the switch capacitance is as small as possible and most importantly so that capacitance mismatch between the RG pins is minimized.
  • Noise propagates into analog circuitry through the power pins of the circuit as a whole and of the device. Bypass capacitors reduce the coupled noise by providing low-impedance power sources local to the analog circuitry.
    • Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-supply applications.
  • To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much better than in parallel with the noisy trace.
  • Place the external components as close to the device as possible. As shown in Figure 75, keep RG close to the pins to minimize parasitic capacitance.
  • Keep the traces as short as possible.