SNVS859C July 2012 – September 2016 LM25101
The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.
These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.
|PART NUMBER||PACKAGE||BODY SIZE (NOM)|
|LM25101||MSOP PowerPAD (8)||3 mm × 3 mm|
|WSON (8)||4 mm × 4 mm|
|WSON (10)||4 mm × 4 mm|
|SO PowerPAD (8)||3.9 mm × 4.89 mm|
|SOIC (8)||3.91 mm × 4.9 mm|