SBAS796 July   2017 ONET2804TLP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 DC Electrical Characteristics
    5. 6.5 AC Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics: General
    8. 6.8 Typical Characteristics: Eye Diagrams
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Signal Path
      2. 7.3.2 Gain Adjustment
      3. 7.3.3 Amplitude Adjustment
      4. 7.3.4 Rate Select
      5. 7.3.5 Threshold Adjustment
      6. 7.3.6 Filter Circuitry
      7. 7.3.7 AGC and RSSI
    4. 7.4 Device Functional Modes
      1. 7.4.1 Pad Control
      2. 7.4.2 Two-Wire Interface Control
    5. 7.5 Programming
      1. 7.5.1 Bus Idle
      2. 7.5.2 Start Data Transfer
      3. 7.5.3 Stop Data Transfer
      4. 7.5.4 Data Transfer
      5. 7.5.5 Acknowledge
    6. 7.6 Register Maps
      1. 7.6.1  Register Descriptions
      2. 7.6.2  Register 0: Control Settings (address = 00h) [reset = 0h]
      3. 7.6.3  Register 1: Amplitude and Rate for Channel 1 (address = 01h) [reset = 0h]
      4. 7.6.4  Register 2: Threshold and Gain for Channel 1 (address = 02h) [reset = 0h]
      5. 7.6.5  Register 7: Amplitude and Rate for Channel 2 (address = 07h) [reset = 0h]
      6. 7.6.6  Register 8: Threshold and Gain for Channel 1 (address = 08h) [reset = 0h]
      7. 7.6.7  Register 13: Amplitude and Rate for Channel 3 (address = 0Dh) [reset = 0h]
      8. 7.6.8  Register 14: Threshold and Gain for Channel 3 (address = 0Eh) [reset = 0h]
      9. 7.6.9  Register 19: Amplitude and Rate for Channel 4 (address = 13h) [reset = 0h]
      10. 7.6.10 Register 20: Threshold and Gain for Channel 4 (address = 14h) [reset = 0h]
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Pad Control Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Two-Wire Control Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • Y|0
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • 4-Channel Multi-Rate Operation: Up to 28 Gbps
  • Dissipation at a 3-V Supply: 90 mW per Channel
  • Differential Transimpedance: 7.5 kΩ
  • Bandwidth: 17.5 GHz
  • Input-Referred Noise: 2 μArms
  • Input Overload Current: 3.2 mAPP
  • Programmable Output Voltage
  • Adjustable Gain and Bandwidth
  • Received Signal Strength Indicator (RSSI) for Each Channel
  • Isolation Between Channels (Die Only): 40 dB
  • Single Supply: 2.8 V to 3.3 V
  • Pad Control or 2-Wire Control
  • On-Chip Filter Capacitors
  • –40°C to +100°C Operation
  • Die Size: 3250 μm × 1450 μm, 750-μm Channel Pitch

2 Applications

  • 100 Gigabit Ethernet Optical Receivers
  • ITU OTL4.4
  • CFP2, CFP4, and QSFP28 Modules with Internal Retiming

3 Description

The ONET2804TLP device is a high-gain, limiting transimpedance amplifier (TIA) for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750-μm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode.

The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth, and input threshold.

The ONET2804TLP provides 17.5-GHz bandwidth, a gain of 7.5 kΩ, an input-referred noise of 2 µArms, and a received signal strength indicator (RSSI) for each channel. 40-dB isolation between channels results in low crosstalk penalty in the receiver.

The device requires a single 2.8-V to 3.3-V supply and typically dissipates 90 mW per channel with a differential output amplitude of 300 mVPP. The device is characterized for operation from –40°C to +100°C and is available in die form with a 750-μm channel pitch.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
ONET2804TLP Base Die in Waffle Pack 3250 µm × 1450 µm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Simplified Schematic

ONET2804TLP sbas796_first_page_simplified_schem.gif

Eye Diagram

ONET2804TLP D012_sbas796.png