SBOS283D September   2003  – March 2018 REF1112

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Shunt Reference Application Schematic
      2.      Pinout
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
      2. 8.2.2 MicroPOWER 3-μA, 1-V Voltage Reference
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 2.5-V Reference on 1 μA
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 Adjustable Voltage Shunt Reference
      5. 8.2.5 Level Shift to Achieve Full ADC Input Range
      6. 8.2.6 Stable Current Source
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

VR = 1.25 V, TA = +25°C, IREF = 1.2 μA and CLOAD = 10 nF, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VR Reverse breakdown voltage IREF = 1.2 µA 1.2475 1.25 1.2525 V
–0.2% 0.2%
ΔVR Temperature coefficient 1.2 μA ≤ IREF ≤ 5 mA, TA = 0°C to +70°C 10 30 ppm/°C
1.5 μA ≤ IREF ≤ 5 mA, TA = –40°C to +85°C 15 50
1.5 μA ≤ IREF ≤ 5 mA, TA = –40°C to +125°C 15
IRMIN Minimum operating current 1 1.2 µA
ΔVR/ΔIR Reverse breakdown voltage change with current 1.2 μA ≤ IREF ≤ 5 mA 30 100 ppm/mA
ZR Reverse dynamic impedance 1.2 μA ≤ IREF ≤ 5 mA 0.037 0.125 Ω
eN Low-frequency noise(1) 0.1 Hz ≤ IREF ≤ 10 Hz 25 μVPP
VHYST Thermal hysteresis(2) 100 ppm
ΔVR Long-term stability +25°C ± 0.1°C 60 ppm/kHr
(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1 Hz and a 4-pole, low-pass Chebyshev filter at 10 Hz.
(2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range, and returning to +25°C.