SBOS410H June   2007  – June 2016 REF5010 , REF5020 , REF5025 , REF5030 , REF5040 , REF5045 , REF5050

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Solder Heat Shift
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Temperature Monitoring
      2. 9.3.2 Temperature Drift
      3. 9.3.3 Thermal Hysteresis
      4. 9.3.4 Noise Performance
      5. 9.3.5 Output Adjustment Using the TRIM/NR Pin
    4. 9.4 Device Functional Modes
      1. 9.4.1 Basic Connections
      2. 9.4.2 Supply Voltage
      3. 9.4.3 Negative Reference Voltage
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 16-bit, 250-KSPS Data Acquisition System
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Power Dissipation
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage –0.2 18 V
Output short circuit –30 30 mA
Operating temperature –55 125 °C
Junction temperature (TJ max) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN VOUT + 0.2 V(1) 18 V
IOUT –10 10 mA
(1) Except for the REF5020, where VIN (min) = 2.7 V.

7.4 Thermal Information

THERMAL METRIC(1) REF50xx UNIT
D (SOIC) DGK (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 115 160.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.4 53.9 °C/W
RθJB Junction-to-board thermal resistance 57.1 82.3 °C/W
ψJT Junction-to-top characterization parameter 15.4 5.1 °C/W
ψJB Junction-to-board characterization parameter 56.2 80.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At TA = 25°C, ILOAD = 0, CL = 1 μF, and VIN = (VOUT + 0.2 V) to 18 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT VOLTAGE
VOUT Output Voltage REF5020 (VOUT = 2.048 V)(1),
2.7 V < VIN < 18 V
2.048 V
REF5025 2.5
REF5030 3.0
REF5040 4.096
REF5050 5.0
REF5010 10.0
Initial Accuracy: High Grade All voltage options(1) –0.05% 0.05%
Initial Accuracy: Standard Grade All voltage options(1) –0.1% 0.1%
NOISE
Output Voltage Noise f = 0.1 Hz to 10 Hz 3 µVPP/V
OUTPUT VOLTAGE TEMPERATURE DRIFT
dVOUT/dT Output Voltage Temperature Drift
High-Grade 2.5 3 ppm/°C
Standard-Grade 3 8 ppm/°C
LINE REGULATION
ΔVO(ΔVI) Line Regulation VIN = (VOUT + 0.2) to 18 V(4) 0.1 1 ppm/V
VIN = VOUT + 0.2 V,
TA = –40°C to 125°C(4)
0.2 1 ppm/V
LOAD REGULATION
ΔVO(ΔIL) Load Regulation –10 mA < ILOAD < 10 mA,
VIN = VOUT + 0.75 V(5)
20 30 ppm/mA
–10 mA < ILOAD < 10 mA,
VIN = VOUT + 0.75 V
TA = –40°C to 125°C(5)
50 ppm/mA
SHORT-CIRCUIT CURRENT
ISC Short circuit current VOUT = 0 25 mA
THERMAL HYSTERESIS(2) (3)
High-Grade VSSOP-8 Cycle 1 50 ppm
Standard-Grade VSSOP-8 Cycle 1 70 ppm
High-Grade SOIC-8 Cycle 1 70 ppm
Standard-Grade SOIC-8 Cycle 1 90 ppm
High-Grade VSSOP-8 Cycle 2 40 ppm
Standard-Grade VSSOP-8 Cycle 2 40 ppm
High-Grade SOIC-8 Cycle 2 50 ppm
Standard-Grade SOIC-8 Cycle 2 50 ppm
LONG-TERM STABILITY(3)
VSSOP-8 0 to 1000 hours 125 ppm/1000 hr
VSSOP-8 1000 to 2000 hours 45 ppm/1000 hr
SOIC-8 0 to 1000 hours 100 ppm/1000 hr
SOIC-8 1000 to 2000 hours 50 ppm/1000 hr
TEMP PIN
Voltage Output At TA = 25°C 575 mV
Temperature Sensitivity TA = -40°C to 125°C 2.64 mV/°C
TURNON SETTLING TIME
Turnon Settling Time To 0.1% with CL = 1 μF 200 μs
POWER SUPPLY
VS Supply Voltage See Note (1) VOUT + 0.2(1) 18 V
Quiescent Current 0.8 1 mA
TA = -40°C to 125°C 1.2 mA
TEMPERATURE RANGE
Specified Range –40 125 °C
Operating Range –55 125 °C
(1) For VOUT ≤ 2.5 V, the minimum supply voltage is 2.7 V.
(2) The thermal hysteresis procedure is explained in more detail in the Thermal Hysteresis section.
(3) Data collected using devices soldered onto the test board.
(4) Except for REF5020, where VIN = 2.7 V to 18 V.
(5) Except for REF5020, where VIN = 3 V.

7.6 Typical Characteristics

At TA = 25°C, ILOAD = 0, and VS = VOUT + 0.2 V, unless otherwise noted. For VOUT ≤ 2.5 V, the minimum supply voltage is 2.7 V.
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_histo_0-85_bos410.gif
(0°C to 85°C)
Figure 1. Temperature Drift
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_histo_vout_bos410.gif
Figure 3. Output Voltage Initial Accuracy
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_psrr-freq_bos410.gif
Figure 5. Power-Supply Rejection Ratio vs Frequency
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_vout-iload_5025_bos410.gif
Figure 7. REF5025 Output Voltage vs Load Current
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_iq-tmp_bos410.gif
Figure 9. Quiescent Current vs Temperature
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_line_reg-tmp_bos410.gif
Figure 11. Line Regulation vs Temperature
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_noise_bos410.gif
Figure 13. NOISE
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_startup_10_bos410.gif
(REF5025, CL = 10μF)
Figure 15. Start-Up
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_load_tran_1_10_bos410.gif
(CL = 1 μF, IOUT = 10 mA)
Figure 17. Load Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_load_tran_10_10_bos410.gif
(CL = 10 μF, IOUT = 10 mA)
Figure 19. Load Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_line_tran_10_bos410.gif
(CL = 10 μF)
Figure 21. Line Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C006_SBOS410.png
VSSOP-8
Figure 23. REF50xx Long-Term Stability
(Second 1000 Hours)
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C001_SBOS410.png
SOIC-8
Figure 25. REF50xx Long-Term Stability (First 1000 Hours)
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C002_SBOS410.png
SOIC-8
Figure 27. REF50xx Long-Term Stability
(2000 Hours)
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_histo_40-125_bos410.gif
(–40°C to 125°C)
Figure 2. Temperature Drift
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C001_SBOSxxx.png
Figure 4. Output Voltage Accuracy vs Temperature
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_vdrop_iload_bos410.gif
Figure 6. Dropout Voltage vs Load Current
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_temp_vout-tmp_bos410.gif
Figure 8. Temp Pin Output Voltage vs Temperature
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_iq_vin_bos410.gif
Figure 10. Quiescent Current vs Input Voltage
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_isc-tmp_bos410.gif
Figure 12. Short Circuit Current vs Temperature
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_startup_1_bos410.gif
(REF5025, CL = 1 μF)
Figure 14. Start-Up
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_load_tran_1_1_bos410.gif
(CL = 1 μF, IOUT = 1 mA)
Figure 16. Load Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_load_tran_10_1_bos410.gif
(CL = 10 μF, IOUT = 1 mA)
Figure 18. Load Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 tc_line_tran_1_bos410.gif
(CL = 1 μF)
Figure 20. Line Transient
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C005_SBOS410.png
VSSOP-8
Figure 22. REF50xx Long-Term Stability (First 1000 Hours)
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C004_SBOS410.png
VSSOP-8
Figure 24. REF50xx Long-Term Stability (2000 Hours)
REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050 C003_SBOS410.png
SOIC-8
Figure 26. REF50xx Long-Term Stability
(Second 1000 Hours)