SNOSBA3D June   2011  – May 2015 SM74104

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Typical Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics
    6. 5.6 Typical Performance Characteristics
  6. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Setting the Delay Timer with RT
    4. 6.4 Device Functional Modes
      1. 6.4.1 Startup and UVLO
    5. 6.5 Power Dissipation Considerations
  7. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Trademarks
    2. 10.2 Electrostatic Discharge Caution
    3. 10.3 Glossary

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VDD to VSS –0.3 18 V
VHB to VHS –0.3 18 V
IN to VSS –0.3 VDD + 0.3 V
LO Output –0.3 VDD + 0.3 V
HO Output VHS – 0.3 VHB + 0.3 V
VHS to VSS –1 100 V
VHB to VSS 118 V
RT to VSS –0.3 5 V
Tstg Storage Temperature Range –55 150 °C
Maximum Junction Temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except 2, 3, and 4 ±2000 V
Pins 2, 3, and 4 ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VDD 9 14 V
HS –1 100 V
HB VHS + 8 VHS + 14 V
HS Slew Rate 50 V/ns
Junction Temperature –40 125 °C

5.3 Thermal Information

THERMAL METRIC(1) SM74104 UNIT
D DPR
8 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 114.5 37.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 61.1 38.1
RθJB Junction-to-board thermal resistance 55.6 14.9
ψJT Junction-to-top characterization parameter 9.7 0.4
ψJB Junction-to-board characterization parameter 54.9 15.2
RθJC(bot) Junction-to-case (bottom) thermal resistance - 4.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

5.4 Electrical Characteristics

Over operating junction temperature range, VDD = VHB = 12 V, VSS = VHS = 0 V, RT = 100 kΩ, no load on LO or HO, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD Quiescent Current LI = HI = 0V 0.4 0.6 mA
IDDO VDD Operating Current f = 500 kHz 1.9 3 mA
IHB Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA
IHBO Total HB Operating Current f = 500 kHz 1.3 3 mA
IHBS HB to VSS Current, Quiescent VHS = VHB = 100V 0.05 10 µA
IHBSO HB to VSS Current, Operating f = 500 kHz 0.08 mA
INPUT PINS
VIL Low Level Input Voltage Threshold 0.8 1.8 V
VIH High Level Input Voltage Threshold 1.8 2.2 V
RI Input Pulldown Resistance 100 200 500 kΩ
TIME DELAY CONTROLS
VRT Nominal Voltage at RT 2.7 3 3.3 V
IRT RT Pin Current Limit RT = 0V 0.75 1.5 2.25 mA
TD1 Delay Timer, RT = 10 kΩ 58 90 130 ns
TD2 Delay Timer, RT = 100 kΩ 140 200 270 ns
UNDER VOLTAGE PROTECTION
VDDR VDD Rising Threshold 6.0 6.9 7.4 V
VDDH VDD Threshold Hysteresis 0.5 V
VHBR HB Rising Threshold 5.7 6.6 7.1 V
VHBH HB Threshold Hysteresis 0.4 V
BOOT STRAP DIODE
VDL Low-Current Forward Voltage IVDD-HB = 100 µA 0.60 0.9 V
VDH High-Current Forward Voltage IVDD-HB = 100 mA 0.85 1.1 V
RD Dynamic Resistance IVDD-HB = 100 mA 0.8 1.5 Ω
LO GATE DRIVER
VOLL Low-Level Output Voltage ILO = 100 mA 0.25 0.4 V
VOHL High-Level Output Voltage ILO = –100 mA
VOHL = VDD – VLO		 0.35 0.55 V
IOHL Peak Pullup Current VLO = 0V 1.6 A
IOLL Peak Pulldown Current VLO = 12V 1.8 A
HO GATE DRIVER
VOLH Low-Level Output Voltage IHO = 100 mA 0.25 0.4 V
VOHH High-Level Output Voltage IHO = –100 mA,
VOHH = VHB – VHO		 0.35 0.55 V
IOHH Peak Pullup Current VHO = 0V 1.6 A
IOLH Peak Pulldown Current VHO = 12V 1.8 A

5.5 Switching Characteristics

Over operating junction temperature range, VDD = VHB = 12 V, VSS = VHS = 0 V, no load on LO or HO, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
tLPHL Lower Turn-Off Propagation Delay (IN Rising to LO Falling) 25 56 ns
tHPHL Upper Turn-Off Propagation Delay (IN Falling to HO Falling) 25 56 ns
tRC, tFC Either Output Rise/Fall Time CL = 1000 pF 15 ns
tR, tF Either Output Rise/Fall Time
(3V to 9V)		 CL = 0.1 µF 0.6 µs
tBS Bootstrap Diode Turn-Off Time IF = 20 mA, IR = 200 mA 50 ns

5.6 Typical Performance Characteristics

SM74104 30160010.gif
Figure 1. IDD vs Frequency
SM74104 30160012.gif
Figure 3. Quiescent Current vs Supply Voltage
SM74104 30160017.gif
Figure 5. IHB vs Frequency
SM74104 30160016.gif
Figure 7. Diode Forward Voltage
SM74104 30160020.gif
Figure 9. Undervoltage Rising Threshold vs Temperature
SM74104 30160022.gif
Figure 11. LO & HO Gate Drive—Low Level Output Voltage vs Temperature
SM74104 30160015.gif
Figure 13. Timing vs Temperature RT = 10K
SM74104 30160014.gif
Figure 15. Turn On Delay vs RT Resistor Value
SM74104 30160011.gif
Figure 2. Operating Current vs Temperature
SM74104 30160013.gif
Figure 4. Quiescent Current vs Temperature
SM74104 30160018.gif
Figure 6. HO & LO Peak Output Current vs Output Voltage
SM74104 30160019.gif
Figure 8. Undervoltage Threshold Hysteresis vs Temperature
SM74104 30160021.gif
Figure 10. LO & HO Gate Drive—High Level Output Voltage vs Temperature
SM74104 30160023.gif
Figure 12. Turn Off Propagation Delay vs Temperature
SM74104 30160024.gif
Figure 14. Timing vs Temperature RT = 100K