SLLSEY4A July   2017  – November 2018 THVD1500

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Power Dissipation
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Failsafe
        5. 9.2.1.5 Transient Protection
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
    2. 12.2 Third-Party Products Disclaimer
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) THVD1500 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 130.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 72.8 °C/W
RθJB Junction-to-board thermal resistance 73.6 °C/W
ψJT Junction-to-top characterization parameter 25.0 °C/W
ψJB Junction-to-board characterization parameter 72.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance NA °C/W
TJ(TSD) Thermal shut-down temperature 170 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.