SNOSD29E December   2016  – April 2018 TLV8541 , TLV8542 , TLV8544

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Low Power PIR Motion Detector
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions: TLV8541 DBV
    2.     Pin Functions: TLV8542 D & RUG
    3.     Pin Functions: TLV8544 PW & D
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Rail-To-Rail Input
      2. 8.4.2 Supply Current Changes Over Common Mode
      3. 8.4.3 Design Optimization With Rail-To-Rail Input
      4. 8.4.4 Design Optimization for Nanopower Operation
      5. 8.4.5 Common-Mode Rejection
      6. 8.4.6 Output Stage
      7. 8.4.7 Driving Capacitive Load
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Battery-Powered Wireless PIR Motion Detectors
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Calculation of the Cutoff Frequencies and Gain of Stage A:
        2. 9.2.2.2 Calculation of the Cutoff Frequencies and Gain of Stage B
        3. 9.2.2.3 Calculation of the Total Gain of Stages A and B
        4. 9.2.2.4 Window Comparator Stage
        5. 9.2.2.5 Reference Voltages
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application: 60-Hz Twin T Notch Filter
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Dos and Don'ts
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The TLV854x ultra-low-power operational amplifiers (op amps) are intended for cost-optimized sensing applications in wireless and low-power wired equipment. The TLV854x family of op amps minimize power consumption in equipment such as motion detecting security systems (like microwave and PIR motion sensing) where operational battery life is critical. They also have a carefully designed CMOS input stage, enabling very low, femto-ampere bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications. Examples of these include transimpedance amplifier (TIA) configurations with megaohm feedback resistors, and high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources such as mobile phones, WiFi, radio transmitters and tab readers.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE
TLV8544 TSSOP (14) 5.00 mm × 4.40 mm
SOIC (14) 8.65 mm × 3.91 mm
TLV8542 SOIC (8) 4.9 mm × 3.90 mm
X2QFN (8) 1.50 mm × 1.50 mm
TLV8541 SOT-23 (5) 2.90 mm x 1.60 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Nanopower Amplifiers Family

FAMILY CHANNEL COUNT IQ PER CHANNEL VOS (MAXIMUM) VSUPPLY
TLV854x 1, 2, 4 500 nA 3.1 mV 1.7 to 3.6 V
TLV880x 1, 2 320 nA 4.5 mV 1.7 to 5.5 V
LPV81x 1, 2 425 nA 0.3 mV 1.6 to 5.5 V