SBOS383D December   2006  – December 2016 TMP411

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
  8. 8 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Series Resistance Cancellation
      2. 9.3.2 Differential Input Capacitance
      3. 9.3.3 Temperature Measurement Data
      4. 9.3.4 THERM (Pin 4) and ALERTor THERM2 (Pin 6)
      5. 9.3.5 Sensor Fault
      6. 9.3.6 Undervoltage Lockout
      7. 9.3.7 Filtering
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode (SD)
      2. 9.4.2 One-Shot Conversion
    5. 9.5 Programming
      1. 9.5.1  Serial Interface
      2. 9.5.2  Bus Overview
      3. 9.5.3  Timing Diagrams
      4. 9.5.4  Serial Bus Address
      5. 9.5.5  Read and Write Operations
      6. 9.5.6  Timeout Function
      7. 9.5.7  High-Speed Mode
      8. 9.5.8  General Call Reset
      9. 9.5.9  Software Reset
      10. 9.5.10 SMBus Alert Function
    6. 9.6 Register Map
      1. 9.6.1  Register Information
      2. 9.6.2  Pointer Register
      3. 9.6.3  Temperature Registers
      4. 9.6.4  Limit Registers
      5. 9.6.5  Status Register
      6. 9.6.6  Configuration Register
      7. 9.6.7  Resolution Register
      8. 9.6.8  Conversion Rate Register
      9. 9.6.9  N-Factor Correction Register
      10. 9.6.10 Minimum and Maximum Registers
      11. 9.6.11 Consecutive Alert Register
      12. 9.6.12 THERM Hysteresis Register
      13. 9.6.13 Remote Temperature Offset Register
      14. 9.6.14 Identification Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

(1)
MIN MAX UNIT
Input voltage Pins 2, 3, 4 only –0.5 VS + 0.5 V
Input voltage Pins 6, 7, 8 only –0.5 7 V
Input current 10 mA
Power supply, Vs 7 V
Operating temperature range –55 127 °C
Junction temperature, TJ(max) 150 °C
Storage temperature, Tstg –60 130 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ Supply voltage 2.7 3.3 5.5 V
TA Operating free-air temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TMP411 UNIT
D (SOIC) DGK (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 112.3 166.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 59.4 58.3 °C/W
RθJB Junction-to-board thermal resistance 53.0 86.7 °C/W
ψJT Junction-to-top characterization parameter 13.6 7.5 °C/W
ψJB Junction-to-board characterization parameter 52.4 85.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

at TA = –40°C to +125°C and VS = 2.7 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE ERROR
TERROR(LOCAL) Local temperature sensor TA = –40°C to 125°C –2.5 ±1.25 2.5 °C
TA= 15°C to 85°C
VS = 3.3 V 		–1 ±0.25 1 °C
TERROR(REMOTE) Remote temperature sensor(1) TA = 15°C to 75°C
TDIODE = –40°C to 150°C
VS = 3.3 V 		–1 ±0.0625 1 °C
TA = –40°C to 100°C
TDIODE = –40°C to 150°C
VS = 3.3 V 		–3 ±1 3 °C
TA = –40°C to 125°C
TDIODE = –40°C to 150°C
VS = 3.3 V 		–5 ±3 5 °C
TERROR_PS Temperature error power supply sensitivity (local and remote) VS = 2.7 V to 5.5 V
TDIODE = –40°C to 150°C
 –0.5 ±0.2 0.5 °C/V
TEMPERATURE MEASUREMENT
Conversion time (per channel) One-shot mode 105 115 125 ms
Resolution Local temperature sensor (programmable) 9 12 Bits
Remote temperature sensor 12 Bits
Remote sensor source currents High Series resistance: 3 kΩ maximum 120 µA
Medium high 60 µA
Medium low 12 µA
Low 6 µA
η Remote transistor ideality factor Optimized ideality factor 1.008
SMBUS INTERFACE
VIH Logic input high voltage (SCL, SDA) 2.1 V
VIL Logic input low voltage (SCL, SDA) 0.8 V
Hysteresis 500 mV
SMBus output low sink current 6 mA
Logic input current –1 1 µA
SMBus input capacitance (SCL, SDA) 3 pF
SMBus clock frequency 3.4 MHz
SMBus timeout 25 30 35 ms
SCL falling edge to SDA valid time 1 µs
DIGITAL OUTPUTS
VOL Output low voltage IOUT = 6 mA 0.15 0.4 V
IOH High-level output leakage current VOUT = Vs
0.1 1 µA
ALERT or THERM2 output low sink current ALERT/THERM2 forced to 0.4 V 6 mA
THERM output low sink current THERM forced to 0.4 V 6 mA
POWER SUPPLY
VS Specified voltage range 2.7 5.5 V
IQ Quiescent current 0.0625 conversions per second
VS = 3.3 V		 28 30 µA
Eight conversions per second
VS = 3.3 V		 400 475 µA
Serial bus inactive, shutdown mode 3 10 µA
Serial bus active, fS = 40 kHz, shutdown mode 90 µA
Serial bus active, fS = 3.4 MHz, shutdown mode 350 µA
Undervoltage lockout 2.3 2.4 2.6 V
POR Power-on-reset threshold 1.6 2.3 V
(1) Tested with less than 5-Ω effective series resistance and 100-pF differential input capacitance. TA is the ambient temperature of the TMP411. TDIODE is the temperature at the remote diode sensor.

7.6 Timing Requirements

MIN NOM MAX UNIT
f(SCL) SCL operating frequency Fast mode 0.001 0.4 MHz
High-speed mode 0.001 3.4
t (BUF) Bus free time between STOP and START condition Fast mode 600 ns
High-speed mode 160
t (HDSTA) Hold time after repeated START condition. After this period, the first clock is generated Fast mode 100 ns
High-speed mode 100
t (SUSTA) Repeated START condition setup time Fast mode 100 ns
High-speed mode 100
t (SUSTO) STOP condition setup time Fast mode 100 ns
High-speed mode 100
t (HDDAT) Data hold time Fast mode 0 (1) ns
High-speed mode 0 (2)
t (SUDAT) Data setup time Fast mode 100 ns
High-speed mode 10
t (LOW) SCL clock LOW period Fast mode 1300 ns
High-speed mode 160
t (HIGH) SCL clock HIGH period Fast mode 600 ns
High-speed mode 60
t F Clock and data fall time Fast mode 300 ns
High-speed mode 160
t R Clock and data rise time Fast mode 300 ns
High-speed mode 160
SCLK ≤ 100 kHz Fast mode 1000
High-speed mode
(1) For cases with an SCL fall time of less than 20 ns, or an SDA rise or fall time of less than 20 ns, the hold time must be greater than 20 ns.
(2) For cases with an SCL fall time of less than 10 ns, or an SDA rise or fall time of less than 10 ns, the hold time must be greater than 10 ns.