SCDS383E August   2018  – December 2019 TMUX6111 , TMUX6112 , TMUX6113

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 7.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 7.7 Electrical Characteristics (Single Supply: 12 V)
    8. 7.8 Switching Characteristics (Single Supply: 12 V)
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Truth Tables
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1  On-Resistance
      2. 9.1.2  Off-Leakage Current
      3. 9.1.3  On-Leakage Current
      4. 9.1.4  Break-Before-Make Delay
      5. 9.1.5  Turn-On and Turn-Off Time
      6. 9.1.6  Charge Injection
      7. 9.1.7  Off Isolation
      8. 9.1.8  Channel-to-Channel Crosstalk
      9. 9.1.9  Bandwidth
      10. 9.1.10 THD + Noise
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Ultra-low Leakage Current
      2. 9.3.2 Ultra-low Charge Injection
      3. 9.3.3 Bidirectional and Rail-to-Rail Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
    3. 10.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3.2 Ultra-low Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 are implemented with simple transmission gate topology, as shown in Figure 28. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. The devices utilize special charge-injection cancellation circuitry that reduces the source (Sx)-to-drain (Dx) charge injection to as low as 0.6 pC at VS = 0 V, as shown in Figure 29.

TMUX6111 TMUX6112 TMUX6113 Transmission_Gate.gifFigure 28. Transmission Gate Topology
TMUX6111 TMUX6112 TMUX6113 D007_SCDS383.gifFigure 29. Source-to-Drain Charge Injection vs Source or Drain Voltage