SLVS729B February   2008  – March 2016 2016 TPD4E004

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage –0.3 5.5 V
VIO Input/output voltage –0.3 VCC + 0.3 V
Bump temperature (soldering) Infrared (15 s) 220 °C
Vapor phase (60 s) 215
Lead temperature (soldering, 10 s) 300 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±15000 V
IEC 61000-4-2 Contact Discharge ±8000
Air-Gap Discharge ±12000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
TA Operating free-air temperature –40 85 °C
VCC Operating voltage for pin VCC 0.9 5.5 V
VIO Operating voltage for pins IO1, IO2, IO3, and IO4 0 Minimum of: (5.8, VCC) V

6.4 Thermal Information

THERMAL METRIC(1) TPD4E004 UNIT
DRY (SON)
6 PINS
RθJA Junction-to-ambient thermal resistance 414.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 258.6 °C/W
RθJB Junction-to-board thermal resistance 251.6 °C/W
ψJT Junction-to-top characterization parameter 70.6 °C/W
ψJB Junction-to-board characterization parameter 248.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VCC = 0.9 V to 5.5 V, TA = TMIN to TMAX (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VCC Supply voltage 0.9 5.5 V
ICC Supply current 500 nA
VF Diode forward voltage IF = 1 mA 0.8 V
II Channel leakage current ±1 nA
VBR Break-down voltage II = 10 μA 6 8 V
CI/O Channel input capacitance VCC = 5 V, Bias of VCC/2, f = 10 MHz 1.6 2 pF
(1) Typical values are at VCC = 5 V and TA = 25°C.

6.6 Typical Characteristics

TPD4E004 g_diodevolt_dccurrent_lvs729.gif
Figure 1. Forward Diode Voltage (Upper Clamp Diode)
(VCC = 0 V, DC Sweep Across the IO Pin)
TPD4E004 g_reversediode_lvs729.gif
Figure 3. Reverse Diode Curve Current IO to Gnd
(VCC = Open)
TPD4E004 g_leak_ta_lvs729.gif
Figure 2. Leakage Current vs Temperature (VIO = 2.5 V)
TPD4E004 g_iocap_involt_lvs729.gif
Figure 4. IO Capacitance vs Input Voltage
(VCC = 5 V)