SLVS625E February   2006  – November 2015 TPS61150 , TPS61151

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Tables
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Start-Up
      2. 8.3.2 Overvoltage Protection (OVP)
      3. 8.3.3 Undervoltage Lockout
      4. 8.3.4 Thermal Shutdown
      5. 8.3.5 Enable
    4. 8.4 Device Functional Modes
      1. 8.4.1 Current Regulation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Maximum Output Current
        2. 9.2.2.2 WLED Brightness Dimming
        3. 9.2.2.3 Inductor Selection
        4. 9.2.2.4 Input and Output Capacitor Selection
      3. 9.2.3 Application Curves
    3. 9.3 Additional Application Circuits
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltages on pin VIN(2) –0.3 V
Voltages on pins SEL1, SEL2, ISET1 and ISET2(2) –0.3 V
Voltage on pin IOUT, SW, IFB1 and IFB2(2) 30 V
Operating junction temperature –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted).
MIN NOM MAX UNIT
VI Input voltage 2.5 6 V
VO Output voltage VIN 27 V
L Inductor(1) 10 μH
CIN Input capacitor(1) 1 μF
CO Output capacitor(1) 1 μF
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C
(1) See the Application and Implementation section for further information.

7.4 Thermal Information

THERMAL METRIC(1) TPS6115x UNIT
DRC (VSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 44.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.1 °C/W
RθJB Junction-to-board thermal resistance 19.2 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 19.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At VI = 3.6 V, SELx = VIN, RSET = 80 kΩ, VIO = 15 V, and TA = –40°C to +85°C. Typical values are at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage range 2.5 6 V
IQ Operating quiescent current into VIN Device PWM switching no load 2 mA
ISD Shutdown current SELx = GND 1.5 μA
VUVLO Undervoltage lockout threshold VIN falling 1.65 1.8 V
Vhys Undervoltage lockout hysterisis 70 mV
ENABLE AND SOFT START
V(selh) SEL logic high voltage VIN = 2.7 V to 6 V 1.2 V
V(sell) SEL logic low voltage VIN = 2.7 V to 6 V 0.4 V
R(en) SEL pulldown resistor 300 700 kΩ
Toff SEL pulse width to disable SELx high to low 40 ms
Kss IFB soft start current steps 16
Tss Soft start time step Measured as clock divider 64
Tss_en Soft start enable time Time between falling and rising of two adjacent SELx pulses 40 ms
CURRENT FEEDBACK
V(ISET) ISET pin voltage 1.204 1.229 1.254 V
K(ISET) Current multiplier IOUT/ISET 820 900 990
KM Current matching In reference to the average of two output current –6% 6%
V(IFB) IFB regulation voltage 300 330 360 mV
V(IFB_L) IFB low threshold hysteresis 60 mV
Tisink Current sink settle time measured from SELx rising edge(1) 6 μs
Ilkg IFB pin leakage current IFB voltage = 25 V 1 μA
POWER SWITCH AND DIODE
rDS(on) N-channel MOSFET on-resistance VIN = VGS = 3.6 V 0.6 0.9 Ω
I(LN_NFET) N-channel leakage current VDS = 25 V 1 μA
VF Power diode forward voltage ID = 0.7 A 0.83 1 V
OC AND OVP
ILIM N-Channel MOSFET current limit Dual output, IOUT = 15 V, D = 76% 0.75 1 1.25 A
Single output , IOUT = 15 V, D = 76% 0.40 0.55 0.7
I(IFB_MAX) Current sink max output current IFB = 330 mV 35 mA
VOVP Overvoltage threshold TPS61150 27 28 29 V
TPS61151 21 22 23
VOVP(hys) Overvoltage hysteresis TPS61150 550 mV
TPS61151 440
PWM AND PFM CONTROL
ƒS Oscillator frequency 1 1.2 1.5 MHz
Dmax Maximum duty cycle VFB = 1 V 90% 93%
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thys Thermal shutdown threshold hysteresis 15 °C
(1) This specification determines the minimum on time required for PWM dimming for desirable linearity. The maximum PWM dimming frequency can be calculated from the minimum duty cycle required in the application.

7.6 Typical Characteristics

Data for all characteristic graphs were taken using the Typical Application with inductor = 10 μH (VLCF4018T-100MR74-2), R1 = R2 = 56 kΩ, unless otherwise noted.

Table 3. Table Of Graphs

FIGURE
Overcurrent limit VIN = 3 V, 3.6 V, and 4 V, Single and dual output Figure 1, Figure 2
K value over current VIN = 3.6 V, ILOAD = 2 mA to 25 mA Figure 3
PWM dimming linearity Frequency = 20 kHz and 30 kHz Figure 4
Single output PWM dimming waveform Figure 5
Multiplexed PWM dimming waveform Figure 6
Start-up waveform Figure 7
TPS61150 TPS61151 cl_dc_lvs625.gif Figure 1. Overcurrent Limit (Single Output) vs Duty Cycle
TPS61150 TPS61151 k_wled_lvs625.gif Figure 3. K Value vs WLED Current
TPS61150 TPS61151 over1_lvs625.gif Figure 2. Overcurrent Limit (Dual Output) vs Duty Cycle
TPS61150 TPS61151 wled_pwm_lvs625.gif Figure 4. WLED Brightness Dimming Linearity
TPS61150 TPS61151 so_wled_lvs625.gif Figure 5. Single Output WLED PWM Brightness Dimming
TPS61150 TPS61151 st_up_lvs625.gif
Figure 7. WLED Start-Up
TPS61150 TPS61151 pwm_dim_lvs625.gif
ISEL1: 4 WLED ISEL2: 2 WLED
Figure 6. Multiplexed PWM Dimming