SCDS219B NOVEMBER   2005  – May 2015 TS5A3157

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
V+ Supply voltage(3) –0.5 6.5 V
VNO VNC VCOM Analog voltage(3)(4)(5) –0.5 V+ + 0.5 V
IK Analog port diode current VNC, VNO, VCOM < 0 or VNO, VNC, VCOM > V+ –50 50 mA
INO
INC
ICOM
On-state switch current VNC, VNO, VCOM = 0 to V+ –50 50 mA
VI Digital input voltage(3)(4) –0.5 6.5 V
IIK Digital input clamp current VI < 0 –50 mA
I+ Continuous current through V+ –100 100 mA
IGND Continuous current through GND –100 100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI/O Switch input/output voltage 0 V+ V
V+ Supply voltage 1.65 5.5 V
VI Control input voltage 0 5.5 V
TA Operating temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) TS5A3157 UNIT
DBV (SOT-23) DCK (SC-70) YZP (DSBGA)
6 PINS 6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 206 252 132 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics for 5-V Supply

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
VCOM, VNO, VNC Analog signal range 0 V+ V
ron ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
see Figure 12
25°C 4.5 V 5.5 10 Ω
Full 12
Δron ON-state
resistance match
between channels
VNO or VNC = 3.15 V,
ICOM = –30 mA,
Switch ON,
see Figure 12
25°C 4.5 V 0.15 0.2 Ω
Full 0.3
ron(flat) ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
see Figure 12
25°C 4.5 V 4 5 Ω
Full 6
INO(OFF), INC(OFF) NO, NC
OFF leakage
current
VNO or VNC = 1 V,
VCOM = 4.5 V,
or
VNO or VNC = 4.5 V,
VCOM = 1 V,
Switch OFF,
see Figure 13
25°C 5.5 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
Switch ON,
see Figure 14
25°C 5.5 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
ICOM(ON) COM
ON leakage
current
VCOM = 1 V,
VNO or VNC = Open,
or
VCOM = 4.5 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
25°C 5.5 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
Digital Control Input (IN)
VIH Input logic high Full V+  × 0.7 5.5 V
VIL Input logic low Full 0 V+  × 0.3 V
IIH, IIL Input leakage
current
VI = 5.5 V or 0 25°C 5.5 V –0.1 0.05 0.1 µA
Full –1 1
Dynamic
tON Turnon time VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 5 V 1 6 8.5 ns
Full 4.5 V to
5.5 V
1 9.5
tOFF Turnoff time VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 5 V 1 3.5 6.5 ns
Full 4.5 V to
5.5 V
1 7.5
tBBM Break-before-make time VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
25°C 5 V 1.8 2 3 ns
Full 4.5 V to
5.5 V
1.8 3.5
QC Charge injection VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
see Figure 21
25°C 5 V 7 pC
CNO(OFF), CNC(OFF) NO, NC
OFF capacitance
VNO or VNC = V+ or GND, Switch OFF,
see Figure 15
25°C 5 V 5.5 pF
CNO(ON), CNC(ON) NO, NC
ON capacitance
VNO or VNC = V+ or GND, Switch ON,
see Figure 15
25°C 5 V 17.5 pF
CCOM(ON) COM
ON capacitance
VCOM = V+ or GND, Switch ON,
see Figure 15
25°C 5 V 17.5 pF
CI Digital input
capacitance
VI = V+ or GND, See Figure 15 25°C 5 V 2.8 pF
BW Bandwidth RL = 50 Ω, Switch ON,
see Figure 18
25°C 5 V 300 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C 5 V –65 dB
XTALK Crosstalk RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C 5 V –66 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 22
25°C 5 V 0.01%
Supply
I+ Positive supply
current
VI = V+ or GND, Switch ON or OFF 25°C 5.5 V 2.5 5 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.6 Electrical Characteristics for 3.3-V Supply

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
VCOM, VNO, VNC Analog signal range 0 V+ V
ron ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
Switch ON,
see Figure 12
25°C 3 V 12 20 Ω
Full 20
Δron ON-state
resistance match
between channels
VNO or VNC = 2.1 V,
ICOM = –24 mA,
Switch ON,
see Figure 12
25°C 3 V 0.2 0.4 Ω
Full 0.3
ron(flat) ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
Switch ON,
see Figure 12
25°C 3 V 9 11 Ω
Full 12
INO(OFF), INC(OFF) NO, NC
OFF leakage
current
VNO or VNC = 1 V,
VCOM = 3 V,
or
VNO or VNC = 3 V,
VCOM = 1 V,
Switch OFF,
see Figure 13
25°C 3.6 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO or VNC = 1 V,
VCOM = Open,
or
VNO or VNC = 3 V,
VCOM = Open,
Switch ON,
see Figure 14
25°C 3.6 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
ICOM(ON) COM
ON leakage
current
VCOM = 1 V,
VNO or VNC = Open,
or
VCOM = 3 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
25°C 3.6 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
Digital Control Input (IN)
VIH Input logic high Full V+  × 0.7 5.5 V
VIL Input logic low Full 0 V+  × 0.3 V
IIH, IIL Input leakage
current
VI = 5.5 V or 0 25°C 3.6 V –0.1 0.05 0.1 µA
Full –1 1
Dynamic
tON Turnon time VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 3.3 V 3.5 7 9.5 ns
Full 3 V to
3.6 V
1.5 10.5
tOFF Turnoff time VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 3.3 V 1 3.5 6.5 ns
Full 3 V to
3.6 V
1 7.5
tBBM Break-before-make time VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
25°C 3.3 V 2.5 3 5 ns
Full 3 V to
3.6 V
2 5
QC Charge injection VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
see Figure 21
25°C 3.3 V 3 pC
CNO(OFF) NO, NC
OFF capacitance
VNO or VNC = V+ or GND, Switch OFF,
see Figure 15
25°C 3.3 V 5.5 pF
CNO(ON) NO, NC
ON capacitance
VNO or VNC = V+ or GND, Switch ON,
see Figure 15
25°C 3.3 V 17.5 pF
CCOM(ON) COM
ON capacitance
VCOM = V+ or GND, Switch ON,
see Figure 15
25°C 3.3 V 17.5 pF
CI Digital input
capacitance
VI = V+ or GND, See Figure 15 25°C 3.3 V 2.8 pF
BW Bandwidth RL = 50 Ω, Switch ON,
see Figure 18
25°C 3.3 V 300 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C 3.3 V –65 dB
XTALK Crosstalk RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C 3.3 V –66 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 22
25°C 3.3 V 0.015%
Supply
I+ Positive supply current VI = V+ or GND, Switch ON or OFF 25°C 3.6 V 2.5 5 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.7 Electrical Characteristics for 2.5-V Supply

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
VCOM, VNO, VNC Analog signal range 0 V+ V
ron ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
see Figure 12
25°C 2.3 V 35 45 Ω
Full 50
Δron ON-state
resistance match
between channels
VNO or VNC = 1.6 V,
ICOM = –8 mA,
Switch ON,
see Figure 12
25°C 2.3 V 0.3 0.5 Ω
Full 0.7
ron(flat) ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
see Figure 12
25°C 2.3 V 30 40 Ω
Full 40
INO(OFF),
INC(OFF)
NO, NC
OFF leakage
current
VNO or VNC = 0.5 V,
VCOM = 2.2 V,
or
VNO or VNC = 2.2 V,
VCOM = 0.5 V,
Switch OFF,
see Figure 13
25°C 2.7 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO or VNC = 0.5 V,
VCOM = Open,
or
VNO or VNC = 2.2 V,
VCOM = Open,
Switch ON,
see Figure 14
25°C 2.7 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
ICOM(ON) COM
ON leakage
current
VCOM = 0.5 V,
VNO or VNC = Open,
or
VCOM = 2.2 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
25°C 2.7 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
Digital Control Input (IN)
VIH Input logic high Full V+  × 0.7 5.5 V
VIL Input logic low Full 0 V+  × 0.3 V
IIH, IIL Input leakage
current
VI = 5.5 V or 0 25°C 2.7 V –0.1 0.05 0.1 µA
Full –1 1
Dynamic
tON Turnon time VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 2.5 V 5 8 13.5 ns
Full 2.3 V to
2.7 V
3.5 14
tOFF Turnoff time VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 2.5 V 1 3.5 6.5 ns
Full 2.3 V to
2.7 V
1 7.5
tBBM Break-before-make time VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
25°C 2.5 V 3.5 5 7 ns
Full 2.3 V to
2.7 V
3 7.5
QC Charge injection VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
see Figure 21
25°C 2.5 V 2 pC
CNO(OFF), CNC(OFF) NO, NC
OFF capacitance
VNO or VNC = V+ or GND, Switch OFF,
see Figure 15
25°C 2.5 V 5.5 pF
CNO(ON), CNC(ON) NO, NC
ON capacitance
VNO or VNC = V+ or GND, Switch ON,
see Figure 15
25°C 2.5 V 17.5 pF
CCOM(ON) COM
ON capacitance
VCOM = V+ or GND, Switch ON,
see Figure 15
25°C 2.5 V 17.5 pF
CI Digital input
capacitance
VI = V+ or GND, See Figure 15 25°C 2.5 V 2.8 pF
BW Bandwidth RL = 50 Ω,
Switch ON,
See Figure 18 25°C 2.5 V 300 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C 2.5 V –65 dB
XTALK Crosstalk RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C 2.5 V –66 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 22
25°C 2.5 V 0.025%
Supply
I+ Positive supply current VI = V+ or GND, Switch ON or OFF 25°C 2.7 V 2.5 5 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.8 Electrical Characteristics for 1.8-V Supply

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
VCOM, VNO, VNC Analog signal range 0 V+ V
ron ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
Switch ON,
see Figure 12
25°C 1.65 V 140 160 Ω
Full 160
Δron ON-state
resistance match
between channels
VNO or VNC = 1.16 V,
ICOM = –4 mA,
Switch ON,
see Figure 12
25°C 1.65 V 0.5 0.6 Ω
Full 0.75
ron(flat) ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
Switch ON,
see Figure 12
25°C 1.65 V 125 130 Ω
Full 140
INO(OFF), INC(OFF) NO, NC
OFF leakage
current
VNO or VNC = 0.3 V,
VCOM = 1.65 V,
or
VNO or VNC = 1.65 V,
VCOM = 0.3 V,
Switch OFF,
see Figure 13
25°C 1.95 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
INO(ON), INC(ON) NO, NC
ON leakage
current
VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 1.65 V,
VCOM = Open,
Switch ON,
see Figure 14
25°C 1.95 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
ICOM(ON) COM
ON leakage
current
VCOM = 0.3 V,
VNO or VNC = Open,
or
VCOM = 1.65 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
25°C 1.95 V –0.1 0.05 0.1 µA
Full –0.2 0.1 0.2
Digital Control Input (IN)
VIH Input logic high Full V+  × 0.65 5.5 V
VIL Input logic low Full 0 V+  × 0.35 V
IIH, IIL Input leakage
current
VI = 5.5 V or 0 25°C 1.95 V –0.1 0.05 0.1 µA
Full –1 1
Dynamic
tON Turnon time VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 1.8 V 5 15 23 ns
Full 1.65 V to
1.95 V
7 24
tOFF Turnoff time VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
25°C 1.8 V 1 3.5 6.5 ns
Full 1.65 V to
1.95 V
1 7.5
tBBM Break-before-make time VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
25°C 1.8 V 5.5 7.5 9 ns
Full 1.65 V to
1.95 V
5.2 12
QC Charge injection VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
see Figure 21
25°C 1.8 V 1 pC
CNO(OFF), CNC(OFF) NO, NC
OFF capacitance
VNO or VNC = V+ or GND, Switch OFF,
see Figure 15
25°C 1.8 V 5.5 pF
CNO(ON), CNC(ON) NO, NC
ON capacitance
VNO or VNC = V+ or GND, Switch ON,
see Figure 15
25°C 1.8 V 17.5 pF
CCOM(ON) COM
ON capacitance
VCOM = V+ or GND, Switch ON,
see Figure 15
25°C 1.8 V 17.5 pF
CI Digital input
capacitance
VI = V+ or GND, See Figure 15 25°C 1.8 V 2.8 pF
BW Bandwidth RL = 50 Ω, Switch ON,
see Figure 18
25°C 1.8 V 300 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C 1.8 V –65 dB
XTALK Crosstalk RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C 1.8 V –66 dB
THD Total harmonic distortion RL = 10 kΩ,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 22
25°C 1.8 V 0.015%
Supply
I+ Positive supply current VI = V+ or GND, Switch ON or OFF 25°C 1.95 V 2.5 5 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.9 Typical Characteristics

TS5A3157 typ1_cds199.gif
Figure 1. ron vs VCOM
TS5A3157 typ3_cds199.gif
Figure 3. ron vs VCOM (V+ = 4.5 V)
TS5A3157 typ5_cds219.gif
Figure 5. Charge Injection (QC) vs VCOM
TS5A3157 typ7_cds199.gif
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
TS5A3157 typ9_cds199.gif
Figure 9. Bandwidth (Gain vs Frequency) (V+ = 5 V)
TS5A3157 typ11_cds199.gif
Figure 11. Total Harmonic Distortion vs Frequency
TS5A3157 typ2_cds219.gif
Figure 2. ron vs VCOM (V+ = 3 V)
TS5A3157 typ4_cds199.gif
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
TS5A3157 typ6_cds199.gif
Figure 6. tON and tOFF vs Supply Voltage
TS5A3157 typ8_cds199.gif
Figure 8. Logic-Level Threshold vs V+
TS5A3157 typ10_cds199.gif
Figure 10. OFF Isolation (V+ = 5 V)