SBOS770A May   2017  – June 2017 INA826S

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Inside the INA826S
      2. 7.3.2 Setting the Gain
        1. 7.3.2.1 Gain Drift
      3. 7.3.3 Offset Trimming
      4. 7.3.4 Input Common-Mode Range
      5. 7.3.5 Input Protection
      6. 7.3.6 Input Bias Current Return Path
      7. 7.3.7 Reference Pin (REF)
      8. 7.3.8 Shutdown (EN and ENREF) Pins
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Low-Voltage Operation
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Input Common-Mode Range: Includes V–
  • Common-Mode Rejection:
    • 104 dB (Min, G = 10)
    • 100 dB (Min at 5 kHz, G = 10)
  • Power-Supply Rejection: 100 dB (Min, G = 1)
  • Low Offset Voltage: 150 µV, max
  • Gain Drift: 1 ppm/°C (G = 1), 35 ppm/°C (G > 1)
  • Noise: 18 nV/√Hz, G ≥ 100
  • Bandwidth: 1 MHz (G = 1), 60 kHz (G = 100)
  • Inputs Protected up to ±40 V
  • Rail-to-Rail Output
  • Supply Current: 200 µA
    • Shutdown Current: 2 µA
  • Supply Range:
    • Single Supply: 3 V to 36 V
    • Dual Supply: ±1.5 V to ±18 V
  • Specified Temperature Range:
    –40°C to +125°C
  • Packages: 3-mm × 3-mm VSON

2 Applications

  • Industrial Process Controls
  • Circuit Breakers
  • Battery Testers
  • ECG Amplifiers
  • Power Automation
  • Medical Instrumentation
  • Portable Instrumentation

3 Description

The INA826S device is a low-cost instrumentation amplifier that offers extremely low power consumption along with shutdown and operates over a very wide single- or dual-supply range. A single external resistor sets any gain from 1 to 1000. The device offers excellent stability over temperature, even at G > 1, as a result of the low gain drift of only 35 ppm/°C (max).

The INA826S is optimized to provide excellent common-mode rejection ratio of over 100 dB (G = 10) over frequencies up to 5 kHz. At G = 1, the common-mode rejection ratio exceeds 84 dB across the full input common-mode range from the negative supply all the way up to 1 V of the positive supply. Using a rail-to-rail output, the INA826S is well-suited for low voltage operation from a 3-V single supply as well as dual supplies up to ±18 V.

Shutdown pins are provided to reduce supply current below 2 µA. Additional circuitry protects the inputs against overvoltage of up to ±40 V beyond the power supplies by limiting the input currents to less than 8 mA.

The INA826S is available in a 10-pin, 3-mm ×
3-mm VSON surface-mount package. The INA826S is specified over the –40°C to +125°C temperature range.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
INA826S VSON (10) 3.00 mm × 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

INA826S Simplified Internal Schematic

INA826S frontpage_sbos770.gif

4 Revision History

Changes from * Revision (May 2017) to A Revision

  • Changed output stage offset voltage from 700 µV to 1000 µVGo