SUPPLY |
VIN |
Input voltage range |
|
2.5 |
|
5.5 |
V |
IQIN |
Quiescent current |
Not switching, FB = FB +5%, into PVIN and AVIN |
|
20 |
|
µA |
Isd |
Shutdown current |
Into PVIN and AVIN |
|
0.6 |
5 |
µA |
VUVLO |
Undervoltage lockout threshold |
VIN falling |
2.1 |
2.2 |
2.3 |
V |
Undervoltage lockout hysteresis |
|
|
200 |
|
mV |
TSD |
Thermal shutdown |
Temperature rising |
|
150 |
|
ºC |
Thermal shutdown hysteresis |
|
|
20 |
|
ºC |
CONTROL SIGNAL EN |
VH |
High level input voltage |
VIN = 2.5 V to 5.5 V |
1 |
0.65 |
|
V |
VL |
Low level input voltage |
VIN = 2.5 V to 5.5 V |
|
0.60 |
0.4 |
V |
Ilkg |
Input leakage current |
EN = GND or VIN |
|
10 |
100 |
nA |
RPD |
Pull down resistance |
EN = Low |
|
400 |
|
kΩ |
SOFTSTART |
ISS |
Softstart current |
|
6.3 |
7.5 |
8.7 |
µA |
POWER GOOD |
VTH_PG |
Power good threshold |
Output voltage rising |
93% |
95% |
97% |
|
Output voltage falling |
88% |
90% |
92% |
|
VL |
Low level voltage |
I(sink) = 1 mA |
|
|
0.4 |
V |
Ilkg |
Leakage current |
VPG = 3.6 V |
|
10 |
100 |
nA |
POWER SWITCH |
RDS(on) |
High side FET on-resistance |
ISW = 500 mA |
|
50 |
|
mΩ |
Low side FET on-resistance |
ISW = 500 mA |
|
40 |
|
mΩ |
ILIMF |
High side FET switch current limit |
|
3.7 |
4.6 |
5.5 |
A |
fs |
Switching frequency |
IOUT = 3 A |
|
1.4 |
|
MHz |
OUTPUT |
VOUT |
Output voltage range |
|
0.8 |
|
VIN |
V |
Rod |
Output discharge resistor |
EN = GND, VOUT = 1.8 V |
|
200 |
|
Ω |
VFB |
Feedback regulation voltage |
PWM Mode |
|
0.8 |
|
V |
VFB |
Feedback voltage accuracy VIN ≥ VOUT + 1 V |
IOUT = 1 A, PWM mode, TJ = 25°C |
-1% |
|
+1% |
|
IOUT = 1 A, PWM mode |
-1.4% |
|
+1.4% |
|
IOUT = 0 mA, VOUT ≥ 1.2 V, PFM mode (2) |
-1.4% |
|
+3% |
|
IOUT = 0 mA, VOUT < 1.2 V, PFM mode (1) |
-1.4% |
|
+3.7% |
|
IFB |
Feedback input bias current |
VFB = 0.8 V |
|
10 |
100 |
nA |
|
Line regulation |
VOUT = 1.8 V, PWM operation |
|
0.016 |
|
%/V |
|
Load regulation |
VOUT = 1.8 V, PWM operation |
|
0.04 |
|
%/A |