JAJSBR5H February 2012 – June 2018 TLV62130 , TLV62130A
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLY | ||||||
VIN | Input Voltage Range(1) | 3 | 17 | V | ||
IQ | Operating Quiescent Current | EN=High, IOUT = 0 mA, device not switching | 19 | 27 | μA | |
ISD | Shutdown Current (2) | EN=Low | 1.5 | 4 | μA | |
VUVLO | Undervoltage Lockout Threshold | Falling Input Voltage (PWM mode operation) | 2.6 | 2.7 | 2.8 | V |
Hysteresis | 200 | mV | ||||
TSD | Thermal Shutdown Temperature | 160 | °C | |||
Thermal Shutdown Hysteresis | 20 | |||||
CONTROL (EN, DEF, FSW, SS/TR, PG) | ||||||
VH | High Level Input Threshold Voltage (EN, DEF, FSW) | 0.9 | V | |||
VL | Low Level Input Threshold Voltage (EN, DEF, FSW) | 0.3 | V | |||
ILKG | Input Leakage Current (EN, DEF, FSW) | EN = VIN or GND; DEF, FSW = VOUT or GND | 0.01 | 1 | μA | |
VTH_PG | Power Good Threshold Voltage | Rising (%VOUT) | 92% | 95% | 98% | |
Falling (%VOUT) | 87% | 90% | 94% | |||
VOL_PG | Power Good Output Low | IPG = -2 mA | 0.07 | 0.3 | V | |
ILKG_PG | Input Leakage Current (PG) | VPG = 1.8 V | 1 | 400 | nA | |
ISS/TR | SS/TR Pin Source Current | 2.3 | 2.5 | 2.7 | μA | |
POWER SWITCH | ||||||
RDS(ON) | High-Side MOSFET ON-Resistance | VIN ≥ 6 V | 90 | mΩ | ||
Low-Side MOSFET ON-Resistance | VIN ≥ 6 V | 40 | mΩ | |||
ILIMF | High-Side MOSFET Forward Current Limit(3) | VIN = 12 V, TA = 25°C | 3.6 | 4.2 | A | |
OUTPUT | ||||||
ILKG_FB | Input Leakage Current (FB) | VFB = 0.8 V | 1 | 100 | nA | |
VOUT | Output Voltage Range | VIN ≥ VOUT | 0.9 | 5.5 | V | |
DEF (Output Voltage Programming) | DEF=0 (GND) | VOUT | ||||
DEF=1 (VOUT) | VOUT+5% | |||||
Initial Output Voltage Accuracy(4) | PWM mode operation, VIN ≥ VOUT +1 V | 780 | 800 | 820 | mV | |
Load Regulation(5) | VIN = 12 V, VOUT = 3.3 V, PWM mode operation | 0.05 | %/A | |||
Line Regulation(5) | 4 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 1 A, PWM mode operation | 0.02 | %/V |