SBAS895D May   2018  – May 2022 AMC1300

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Timing Diagram
    12. 7.12 Insulation Characteristics Curves
    13. 7.13 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Isolation Channel Signal Transmission
      3. 8.3.3 Analog Output
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor Sizing
        2. 9.2.2.2 Input Filter Design
        3. 9.2.2.3 Differential-to-Single-Ended Output Conversion
      3. 9.2.3 Application Curves
    3. 9.3 What To Do and What Not To Do
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

5 Device Comparison Table

PARAMETER AMC1300B AMC1300
High-side supply voltage, VDD1 3.0 V to 5.5 V 4.5 V to 5.5 V
Specified ambient temperature, TA –55°C to +125°C –40°C to +125°C
Input offset voltage, VOS 4.5 V ≤ VDD1 ≤ 5.5 V ±0.2 mV ±2 mV
3.0 V ≤ VDD1 ≤ 4.5 V Not applicable
Input offset drift, TCVOS ±0.9 µV/°C (max) ±4 µV/°C (max)
Gain error, EG ±0.3% ±1%
Gain error drift, TCEG ±5 ppm/°C (typ), ±30 ppm/°C (max) ±50 ppm/°C (typ)
Common-mode transient immunity, CMTI 100 kV/µs (min), 150 kV/µs (typ) 15 kV/µs (min), 30 kV/µs (typ)
Output bandwidth, BW 250 kHz (min), 310 kHz (typ) 170 kHz (min), 230 kHz (typ)
INP, INN to OUTP, OUTN signal delay (50% – 90%) 3 µs (max) 3.4 µs (max)