NexFET™ power MOSFETs offer a wide range of n-channel and p-channel discrete and module solutions enabling higher efficiencies, higher power density or frequency and reduced time to market.
TI offers robust n-channel devices with class leading resistance and gate charge enabling high frequency operation and higher power density.
TI's p-channel devices deliver industry best power density and smallest footprints as well as easy to drive low gate charge.
NexFET™ power MOSFET modules achieve outstanding switching performance by optimizing and co-packaging high efficiency NexFET power MOSFETs with and without driver ICs to deliver the best possible power density, efficiency and frequency capability while simultaneously simplifying board layout, design complexity and reducing time to market.
TI offers a wide portfolio of PWM controllers that includes the MOSFET gate drivers or are driverless. They are designed to work optimally with TI's NexFET™ discrete power MOSFETs, Power Blocks, and Power Stages to deliver high power density, high efficiency, low noise risk, and design and PCB layout flexibility.