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Nonvolatile low-power ferroelectric RAM (FRAM) is capable of extremely high-speed write accesses. This application report discusses how to maximize FRAM write speeds specifically in the MSP430FRxx family using simple techniques. The document uses examples from bench tests performed on the MSP430FR5739 device, which can be extended to all MSP430™ FRAM-based devices, and discusses tradeoffs such as CPU clock frequency and block size and how they impact the FRAM write speed.

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