Gallium nitride (GaN): pushing performance beyond silicon
Maximize power density and reliability with TI's portfolio of GaN devices for every power level
TI provides gallium nitride (GaN) power devices and easy-to-use modules that meet next generation system requirements and TI’s high standards of quality and reliability.
High power density & efficiency
GaN technology enables double power density of Silicon designs and reduced switching losses by 80%, which increases system efficiency.
Our family of GaN devices integrate GaN FETs, with high speed drivers and built-in protection into one package. Optimized layout provides an easy to use solution.
Our GaN is backed by over 20 million hours of device and system reliability testing. High-speed over-current and over-temperature protection give designers the confidence to design with GaN.
What is GaN?
Wide portfolio offers an easy to use solution to unlock the full benefits of GaN technology for almost every application.
Featured gallium nitride (GaN) reference designs
This PFC design offers 270W/in^3 power density and 98.7% peak efficiency while switching at 1MHz. The 2-stage interleaved 1.6kW design is ideal for many space constrained applications such as server, telecom, and industrial power supplies.
This design enables low voltage, 100kHz drives and low inductance brushless motors to minimize losses, torque ripple in the motor and achieving efficiency of 98.5%.
This 98% efficient design for driving 200-V AC servo motors up to 2 kW, enables low-inductance motor drive with minimum current ripple for fine position controlled applications.
Featured gallium nitride (GaN) technical documents
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You're in the right place. From drivers to controllers, TI enables you to do more with less power with end-to-end power conversion devices that deliver high efficiency, power density, and reliability.