Gallium nitride (GaN): pushing performance beyond silicon
Maximize power density and reliability with our portfolio of GaN devices for every power level
We provide gallium nitride (GaN) power devices and easy-to-use modules that meet next generation system requirements and our high standards of quality and reliability.
GaN technology enables double power density of silicon designs and reduced switching losses by 80%, increasing system efficiency.
Our family of GaN devices integrate GaN FETs, with high speed drivers and built-in protection into one package. Optimized layout provides an easy to use solution.
What is GaN?
Reliability technical documents
Featured gallium nitride (GaN) reference designs
This PFC design offers 270W/in^3 power density and 98.7% peak efficiency while switching at 1 MHz. The 2-stage interleaved 1.6 kW design is ideal for many space constrained applications such as server, telecom, and industrial power supplies.
This design enables low voltage, 100 kHz drives and low inductance brushless motors to minimize losses, torque ripple in the motor and achieving efficiency of 98.5%.
This 98% efficient design for driving 200-V AC servo motors up to 2 kW, enables low-inductance motor drive with minimum current ripple for fine position controlled applications.
Looking for an MCU for GaN?
C2000 real-time controllers enable engineers to create more efficient and reliable high power systems. Precision sensing, powerful processing, and premium actuation capabilities specifically designed for high-frequency power control applications.