Power management

Do more with GaN FET drivers

High-speed GaN gate drivers enabling high power density and design simplicity for every power topology

TI’s portfolio of gate drivers tailor made for GaN are enabling new levels of high speed, power density, and efficiency in GaN designs. TI GaN drivers provide best-in-class propagation delay and matching for frequencies to 50MHz, better than 5% gate bias clamping to ensure reliable switching, and advanced features such as dead-time control and high slew rate immunity to 300V/ns. From single channel, half-bridge, to automotive qualified solutions, TI offers a GaN FET driver for every high performance application.

GaN FET driver products


5V, 7A low-side GaN driver with 60MHz, 1ns speed


200V, 1.5A, 3A half-Bridge GaN driver with adjustable dead time


100-V, 1.2-A, 5-A, half-bridge gate driver for enhancement mode GaN FETs


Automotive, 100 V 1.2-A / 5-A, half-bridge gate driver for enhancement mode GaN FETs


5V, 4A/6A low side GaN driver

Featured reference designs and EVM boards

Nanosecond laser driver reference design for LiDAR

1ns GaN laser drive stage for high resolution LiDAR applications.

Multi-MHz GaN power stage reference design for high-speed DC/DC converters

Flexible GaN power stage for high efficiency designs up to 50MHz.

LMG1205 GaN power stage evaluation module

Small, easy to use, power stage with an external PWM signal. Enables evaluation for many different DC-DC converter topologies.

Featured literature

Optimizing efficiency through dead time control with the LMG1210 GaN driver (Rev. A)

Learn how this 50MHz half-bridge GaN driver’s adjustable dead time control can be optimized to reduce system losses in high speed designs.

Technical resources

Technical Article

GaN technical articles

Ask questions, share knowledge and help solve problems with fellow engineers in TI’s E2E™ community.

Featured video