Delivering low gate charge and resistance for fast switching transistors
NexFET™ power MOSFETs offer a wide range of n-channel and p-channel discrete and module solutions enabling higher efficiencies, higher power density or frequency and reduced time to market.
TI offers robust n-channel devices with class leading resistance and gate charge enabling high frequency operation and higher power density.
TI's p-channel devices deliver industry best power density and smallest footprints as well as easy to drive low gate charge.
NexFET™ power MOSFET modules achieve outstanding switching performance by optimizing and co-packaging high efficiency NexFET power MOSFETs with and without driver ICs to deliver the best possible power density, efficiency and frequency.