BQ500101 NexFET Power Stage | TI.com

BQ500101 (ACTIVE) NexFET Power Stage

NexFET Power Stage - BQ500101
Datasheet
 

Description

The bq500101 NexFET Power Stage is optimized for wireless power applications covering the WPC v1.2 medium power specification. The device can be used for both the rail voltage control in fixed frequency transmitter types as well as the coil drivers for both fixed and variable frequency types. This combination produces a high-current, high-efficiency, and high-speed switching device in a small 3.5 × 4.5 mm outline package. In addition, the PCB footprint is optimized to help reduce design time and simplify the completion of the overall system design.

Features

  • 98% System Efficiency at 5 A
  • Max Rated Continuous Current 10 A, Peak 15 A
  • High-Frequency Operation (up to 600 kHz)
  • High-Density SON 3.5 × 4.5 mm Footprint
  • Ultra-Low Inductance Package
  • System Optimized PCB Footprint
  • 3.3-V and 5-V PWM Signal Compatible
  • Input Voltages up to 24 V
  • Integrated Bootstrap Diode
  • Shoot-Through Protection
  • RoHS Compliant – Lead Free Terminal Plating
  • Halogen Free
  • Optimized Power Stage Containing High-
    Efficiency Gate Drivers and FETs
  • Optimized for 15-W Wireless Power Transmitter Designs

Parametrics

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Part number Order VDS (V) Power loss (W) Ploss current (A) ID, continuous drain current at Ta=25degC (A) Configuration Package (mm) Operating temperature range (C) Rating Package size: mm2:W x L (PKG) Package Group
BQ500101 Order now 30     0.53     5     10     PowerStage     SON 3.5x4.5 PowerStage     -40 to 125     Catalog     8VSON-CLIP: 16 mm2: 3.5 x 4.5 (VSON-CLIP | 8)     VSON-CLIP | 8