CD74ACT86-EP

ACTIVE

Product details

Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 Input type TTL-Compatible CMOS IOH (max) (mA) -24 Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 Input type TTL-Compatible CMOS IOH (max) (mA) -24 Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SOIC (D) 14 51.9 mm² 8.65 x 6
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Inputs Are TTL-Voltage Compatible
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR-Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Inputs Are TTL-Voltage Compatible
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR-Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

The CD74ACT86-EP is a quadruple 2-input exclusive-OR gate. This device performs the Boolean function Y = A B or Y = AB + AB in positive logic.

A common application is as a true/complement element. If one of the inputs is low, the other input is reproduced in true form at the output. If one of the inputs is high, the signal on the other input is reproduced inverted at the output.

The CD74ACT86-EP is a quadruple 2-input exclusive-OR gate. This device performs the Boolean function Y = A B or Y = AB + AB in positive logic.

A common application is as a true/complement element. If one of the inputs is low, the other input is reproduced in true form at the output. If one of the inputs is high, the signal on the other input is reproduced inverted at the output.

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Technical documentation

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Type Title Date
* Data sheet CD74ACT86-EP datasheet 01 Mar 2006
* VID CD74ACT86-EP VID V6206620 21 Jun 2016
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dec 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 01 Apr 1996

Design & development

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