CSD13201W10 N-Channel NexFET™ Power MOSFET | TI.com

CSD13201W10 (ACTIVE) N-Channel NexFET™ Power MOSFET

 

Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-Low Qg and Qgd
  • Small Footprint (1 mm × 1 mm)
  • Low Profile 0.62-mm Height
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • Gate-Source Voltage Clamp

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD13201W10 Order now 12     Single     34     20.2     2.3     0.3     WLP 1.0x1.0     29     8     0.8     Yes     Catalog