CSD13303W1015 N-Channel NexFET™ Power MOSFET | TI.com

CSD13303W1015 (ACTIVE) N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET  - CSD13303W1015
Datasheet
 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD13303W1015 Order now 12     Single     20     31     3.9     0.4     WLP 1.0x1.5     18     8     0.85     Yes     Catalog