CSD13303W1015 N-Channel NexFET™ Power MOSFET | TI.com

CSD13303W1015 (ACTIVE) N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET  - CSD13303W1015


The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.


  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package


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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD13303W1015 Order now 12     Single     20     31     3.9     0.4     WLP 1.0x1.5     18     8     0.85     Yes     Catalog