CSD13306W CSD13306W 12 V N-Channel NexFET™ Power MOSFET | TI.com

CSD13306W (ACTIVE) CSD13306W 12 V N-Channel NexFET™ Power MOSFET

CSD13306W 12 V N-Channel NexFET™ Power MOSFET - CSD13306W
Datasheet
 

Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

Features

  • Ultra Low on Resistance
  • Low Qg and Qgd
  • Small Footprint 1 × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD13306W Order now 12     Single     10.2     44     8.6     3     WLP 1.0x1.5     12.9     10     1     Yes     Catalog