CSD16321Q5 N-Channel NexFET™ Power MOSFET | TI.com

CSD16321Q5 (ACTIVE) N-Channel NexFET™ Power MOSFET

 

Description

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • SON 5-mm × 6-mm Plastic Package

All trademarks are the property of their respective owners.

Parametrics

Compare all products in N-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16321Q5 Order now 25     Single     2.6     200     14     2.5     SON5x6     10     1.1       100     Yes     Catalog    
CSD16322Q5 Order now 25     Single     5.8     136     6.8     1.3     SON5x6     10     1.1     97     100     Yes     Catalog    
CSD16325Q5 Order now 25     Single     2.2     200     18     3.5     SON5x6     10     1.1       100     Yes     Catalog