This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
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|Rds(on) max at VGS=4.5 V (mOhms)|
|IDM, max pulsed drain current (Max) (A)|
|QG typ (nC)|
|QGD typ (nC)|
|VGSTH typ (V)|
|ID, silicon limited at Tc=25degC (A)|
|ID, package limited (A)|