CSD16340Q3 25V, N Channel NexFET™ Power MOSFET | TI.com

CSD16340Q3 (ACTIVE) 25V, N Channel NexFET™ Power MOSFET

 

Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

Features

  • Optimized for 5 V Gate Drive
  • Resistance Rated at VGS =2.5 V
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic
    Package
  • APPLICATIONS
    • Point of Load Synchronous
      Buck Converter for Applications
      in Networking, Telecom, and
      Computing Systems
    • Optimized for Control
      or Synchronous FET
      Applications

Parametrics

Compare all products in N-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16340Q3 Order now 25     Single     5.5     115     6.5     1.2     SON3x3     6.1     10     0.85       60     Yes     Catalog    
CSD16323Q3 Order now 25     Single     5.5     112     6.2     1.1     SON3x3       10     1.1     21     60     Yes     Catalog    
CSD16327Q3 Order now 25     Single     4.8     112     6.2     1.1     SON3x3       10     1.2       60     Yes     Catalog