CSD16406Q3 N-Channel NexFET™ Power MOSFET | TI.com

CSD16406Q3 (ACTIVE) N-Channel NexFET™ Power MOSFET

 

Description

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, package limited (A) Logic level Rating
CSD16406Q3 Order now 25     Single     7.4     5.3     114     5.8     1.5     SON3x3     16     1.7     60     Yes     Catalog