CSD17303Q5 30V N Channel NexFET™ Power MOSFET | TI.com

CSD17303Q5 (ACTIVE) 30V N Channel NexFET™ Power MOSFET

30V N Channel NexFET™ Power MOSFET - CSD17303Q5
Datasheet
 

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Features

  • Optimized for 5V Gate Drive
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Notebook Point-of-Load
    • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
    • Optimized for Synchronous FET Applications

NexFET is a trademark of Texas Instruments.

Parametrics

Compare all products in N-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17303Q5 Order now 30     Single     2.6     200     18     4     SON5x6     10     1.1       100     Yes     Catalog    
CSD17301Q5A Order now 30     Single     3     181     19     4.3     SON5x6     10     1.1       100     Yes     Catalog    
CSD17302Q5A Order now 30     Single     9     104     5.4     1.2     SON5x6     10     1.2     87       Yes     Catalog    
CSD17304Q3 Order now 30     Single     8.8     88     5.1     1.1     SON3x3     10     1.3     60     60     Yes     Catalog    
CSD17305Q5A Order now 30     Single     3.6     181     14.1     3     SON5x6     10     1.1         Yes     Catalog    
CSD17306Q5A Order now 30     Single     4.2     155     11.8     2.4     SON5x6     10     1.1         Yes     Catalog    
CSD17307Q5A Order now 30     Single     12.1     92     4