CSD17318Q2 30-V N-Channel NexFET™ Power MOSFET | TI.com

CSD17318Q2 (ACTIVE) 30-V N-Channel NexFET™ Power MOSFET

 

Description

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Features

  • Optimized for 5-V Gate Drive
  • Low Capacitance and Charge
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17318Q2 Order now 30     Single     16.9       68     6     1.3     SON2x2     20     10     0.9     25     22     Yes     Catalog    
CSD13202Q2 Order now 12     Single     9.3       76     5.1     0.76     SON2x2     9.1     8     0.8       22     Yes     Catalog    
CSD17313Q2 Order now 30     Single     32       20     2.1     0.4     SON2x2       10     1.3       5     Yes     Catalog    
CSD17571Q2 Order now 30     Single     29     24     39     2.4     0.6     SON2x2       20     1.6       22     Yes     Catalog