SLPS667A February   2017  – July 2017 CSD17318Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical Data
    1. 7.1 Q2 Package Dimensions
      1. 7.1.1 Recommended PCB Pattern
      2. 7.1.2 Recommended Stencil Pattern
    2. 7.2 Q2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Optimized for 5-V Gate Drive
  • Low Capacitance and Charge
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • Storage, Tablets, and Handheld Devices
  • Optimized for Load Switch Applications
  • DC-DC Converters
  • Battery and Load Management Applications

3 Description

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Top View
CSD17318Q2 P0108-01_LPS235.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 6.0 nC
Qgd Gate Charge Gate-to-Drain 1.3 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 20 mΩ
VGS = 4.5 V 13.9
VGS = 8 V 12.6
VGS(th) Threshold Voltage 0.9 V

Device Information(1)

PART NUMBER QTY MEDIA PACKAGE SHIP
CSD17318Q2 3000 7-Inch Reel SON
2.00-mm × 2.00-mm
Plastic Package		 Tape and Reel
CSD17318Q2T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±10 V
ID Continuous Drain Current (Package Limited) 21.5 A
Continuous Drain Current (Silicon Limited), TC = 25°C 25
Continuous Drain Current(1) 10
IDM Pulsed Drain Current, TA = 25°C(2) 68 A
PD Power Dissipation(1) 2.5 W
Power Dissipation, TC = 25°C 16
TJ,
TSTG 		Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse,
ID = 12.4 A, L = 0.1 mH, RG = 25 Ω		 7.7 mJ
  1. Typical RθJA = 55°C/W on a 1-in2, 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 7°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

On-State Resistance vs Gate to Source Voltage

CSD17318Q2 D007_SLPS647.gif

Gate Charge

CSD17318Q2 D004_SLPS647_FP.gif