SLPS667A February 2017  – July 2017 CSD17318Q2

PRODUCTION DATA. 

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Characteristics
    3. 5.3Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1Receiving Notification of Documentation Updates
    2. 6.2Community Resources
    3. 6.3Trademarks
    4. 6.4Electrostatic Discharge Caution
    5. 6.5Glossary
  7. 7Mechanical Data
    1. 7.1Q2 Package Dimensions
      1. 7.1.1Recommended PCB Pattern
      2. 7.1.2Recommended Stencil Pattern
    2. 7.2Q2 Tape and Reel Information

Features

  • Optimized for 5-V Gate Drive
  • Low Capacitance and Charge
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

Applications

  • Storage, Tablets, and Handheld Devices
  • Optimized for Load Switch Applications
  • DC-DC Converters
  • Battery and Load Management Applications

Description

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Top View
CSD17318Q2 P0108-01_LPS235.gif

Product Summary

TA = 25°CTYPICAL VALUEUNIT
VDS Drain-to-Source Voltage30V
Qg Gate Charge Total (4.5 V)6.0nC
Qgd Gate Charge Gate-to-Drain1.3nC
RDS(on) Drain-to-Source On-ResistanceVGS = 2.5 V20
VGS = 4.5 V13.9
VGS = 8 V12.6
VGS(th) Threshold Voltage 0.9V

Device Information(1)

PART NUMBERQTYMEDIA PACKAGE SHIP
CSD17318Q230007-Inch Reel SON
2.00-mm × 2.00-mm
Plastic Package
Tape and Reel
CSD17318Q2T250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage30V
VGSGate-to-Source Voltage ±10V
ID Continuous Drain Current (Package Limited)21.5A
Continuous Drain Current (Silicon Limited), TC = 25°C25
Continuous Drain Current(1)10
IDMPulsed Drain Current, TA = 25°C(2) 68A
PDPower Dissipation(1)2.5W
Power Dissipation, TC = 25°C16
TJ,
TSTG
Operating Junction,
Storage Temperature
–55 to 150°C
EASAvalanche Energy, Single Pulse,
ID = 12.4 A, L = 0.1 mH, RG = 25 Ω
7.7mJ
  1. Typical RθJA = 55°C/W on a 1-in2, 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 7°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

On-State Resistance vs Gate to Source Voltage

CSD17318Q2 D007_SLPS647.gif

Gate Charge

CSD17318Q2 D004_SLPS647_FP.gif