This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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|Part number||Order||VDS (V)||Configuration||Rds(on) max at VGS=4.5 V (mOhms)||Rds(on) max at VGS=10 V (mOhms)||IDM, max pulsed drain current (Max) (A)||QG typ (nC)||QGD typ (nC)||Package (mm)||RDS(on) typ at VGS=2.5 V (Typ) (mOhm)||VGS (V)||VGSTH typ (V)||Logic level|
||30||Single||260||230||5||1.01||0.13||LGA 1.0 x 0.6mm||240||12||0.85||Yes|