CSD17559Q5 30V N-Channel NexFET™ Power MOSFET | TI.com

CSD17559Q5 (ACTIVE)

30V N-Channel NexFET™ Power MOSFET

 

Description

This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Features

  • Extremely Low Resistance
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17559Q5 Order now 30     Single     1.5     1.15     400     39     9.3     SON5x6     20     1.4     257     100     Yes     Catalog