This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.
Part number | Order | VDS (V) | Configuration | Rds(on) max at VGS=4.5 V (mOhms) | Rds(on) max at VGS=10 V (mOhms) | IDM, max pulsed drain current (Max) (A) | QG typ (nC) | QGD typ (nC) | Package (mm) | VGS (V) | VGSTH typ (V) | ID, silicon limited at Tc=25degC (A) | ID, package limited (A) | Logic level |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD17577Q3A |
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30 | Single | 6.4 | 4.8 | 239 | 13 | 2.8 | SON3x3 | 20 | 1.4 | 83 | 35 | Yes |